Counterfeit and defect prevention
Visual and packaging inspection
Electrical performance verification
0.0 / 5.0
- (0 Ratings)
KS8695X
Electronics Part Number
KS8695X-WXManufacturer
MACOM Technology Solutions
KS8695X
Description
Integrated 10/100 Ethernet Switch, 208-PQFPInventory
420 Pcs New Original In Stock
10/100 integrated switch, 208-PQFP 28x28; multi-port capability; managed switching systems.
Quantity
Minimum 1
Minimum 1
Purchase and inquiry
Warranty & Returns
How to Order
Shipping & Delivery
Quality Assurance
365 - Day Quality Guarantee - Every part fully backed.
90 - Day Refund or Exchange - Defective parts? No hassle.
Limited Stock, Order Now - Get reliable parts without worry.
Global Shipping & Secure Packaging
Worldwide Delivery in 3-5 Business Days
100% ESD Anti-Static Packaging
Real-Time Tracking for Every Order
Secure & Flexible Payment
Credit Card, VISA, MasterCard, PayPal, Western Union, Telegraphic Transfer(T/T) and more
All payments encrypted for security
RFQ (Request for Quotations)
Submit your RFQ directly on the product detail page or the RFQ page.
Our sales team will respond within 24 hours.
Payment method
PayPal (recommended for new customers)
Credit Cards
Wire Transfer (T/T) – Available in USD, EUR, HKD, and other currencies.
Important Notice
You'll receive a confirmation email after submitting an RFQ.
Didn't get it? Check your spam folder and whitelist Info@WINSURE-Electronics.com
Prices and stock may change; we'll reconfirm your order.
Questions? Contact us anytime.
Freight
Basic cost: USD 70.00
Actual cost may vary depending on weight and destination
Shipping method
Shipped from Hong Kong via FedEx/DHL/UPS/TNT
Delivery Time
In-stock items: Ready to ship in 1-2 days
Transit time: 3-5 business days (FedEx/DHL/UPS)
Special requests? Contact us: Info@WINSURE-Electronics.com
Quantity
Minimum 1
Minimum 1
(*) (*) is mandatory
We'll get back to you within 24 hours
Technical Specifications
Category
Diodes, RF Diodes
Manufacturer
MACOM Technology Solutions
Packaging
-
Operating Temperature
-40°C ~ 125°C (TJ)
Package / Case
Die
Series
-
Base Product Number
MA4E2502
Product Status
Active
Supplier Device Package
Die
Current - Max
20 mA
Power Dissipation (Max)
50 mW
Diode Type
Schottky
Capacitance @ Vr, F
0.12pF @ 0V, 18GHz
Voltage - Peak Reverse (Max)
5V
Resistance @ If, F
-
Data Sheet Document (D)
Datasheets
Download MA4E2502L-1246 Product Specification (PDF)
HTML Datasheet
MA4E2502L-1246-DG
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.10.0060
Additional Information
Other Names
1465-1028
Standard Package
100
Reviews
0.0/5.0-(Show up to 5 Ratings)
No reviews yet
Publish Evalution
Evalution Message
Please enter your review message.
Please post honest comments and do not post ilegal comments.
Frequently Asked Questions (FAQ)
When designing a high-frequency RF detector circuit above 10 GHz, how does the MA4E2502L-1246 compar
The MA4E2502L-1246 offers superior capacitance stability with only 0.12pF at 0V and minimal variation under reverse bias, making it more predictable than the SMS7630-079LF, whose capacitance can shift significantly with applied voltage. This stability reduces impedance drift in matching networks at frequencies above 10 GHz, minimizing the need for tunable components. For broadband or temperature-variable environments, the MA4E2502L-1246 simplifies design by maintaining consistent reactive behavior, lowering the risk of VSWR degradation in sensitive detector or mixer stages.
Can the MA4E2502L-1246 be used as a drop-in replacement for the MA4E1317 in a 24 GHz radar front-end
While both are Schottky diodes from MACOM, the MA4E2502L-1246 is not a direct drop-in for the MA4E1317 due to differences in die geometry and parasitic inductance. The MA4E2502L-1246 has lower capacitance (0.12pF vs. ~0.3pF) and different bond pad layout, requiring re-optimization of transmission line impedance and ground return paths. To mitigate RF performance degradation, reduce bond wire lengths and use grounded coplanar waveguide structures. Re-simulate the matching network using EM tools, as even minor inductance changes can detune the 24 GHz response.
What are the key thermal and reliability risks when operating the MA4E2502L-1246 near its 50 mW powe
Operating the MA4E2502L-1246 near 50 mW in a sealed, low-airflow environment risks thermal runaway due to limited heat dissipation through the die alone. Without a thermal pad, junction temperature must be estimated using the thermal resistance from junction to case (RθJC), which for bare die is typically high (>500°C/W). Use infrared thermography on the substrate or apply power derating above 85°C ambient. To mitigate failure, limit average power to <30 mW in enclosed systems and ensure low thermal resistance mounting with conductive epoxy or direct eutectic bonding.
In a zero-bias detector application at 18 GHz, how does the MA4E2502L-1246’s zero-bias resistance co
The MA4E2502L-1246 exhibits higher zero-bias resistance than the HSMS-286C, resulting in lower junction conductance and improved sensitivity for weak signal detection at 18 GHz. However, this also increases susceptibility to RF burnout and reduces linearity under strong signal conditions. For low-level detection (e.g., -30 dBm and below), the MA4E2502L-1246 provides better SNR, but in high-dynamic-range systems, consider adding a limiter or attenuator to protect the diode. Always validate with load-pull analysis to optimize termination impedance for maximum sensitivity.
What precautions are needed when handling and assembling the MA4E2502L-1246 bare die in a hybrid mic
Despite its MSL 1 (unlimited floor life), the MA4E2502L-1246 is highly sensitive to ESD due to its 5V peak reverse voltage and nanoscale junction. Use Class 0 ESD controls: grounded workstations, ionizers, and conductive tweezers during die placement. Avoid triboelectric charging during handling—never use plastic trays or non-conductive probes. Perform assembly in a <100 V HBM environment and consider on-wafer testing before final integration. Post-assembly, apply a conformal coating to prevent moisture-induced leakage, even though the part is not moisture-sensitive, to protect bond wires and edges.
When designing a high-frequency RF detector circuit above 10 GHz, how does the MA4E2502L-1246 compar
The MA4E2502L-1246 offers superior capacitance stability with only 0.12pF at 0V and minimal variation under reverse bias, making it more predictable than the SMS7630-079LF, whose capacitance can shift significantly with applied voltage. This stability reduces impedance drift in matching networks at frequencies above 10 GHz, minimizing the need for tunable components. For broadband or temperature-variable environments, the MA4E2502L-1246 simplifies design by maintaining consistent reactive behavior, lowering the risk of VSWR degradation in sensitive detector or mixer stages.
Can the MA4E2502L-1246 be used as a drop-in replacement for the MA4E1317 in a 24 GHz radar front-end
While both are Schottky diodes from MACOM, the MA4E2502L-1246 is not a direct drop-in for the MA4E1317 due to differences in die geometry and parasitic inductance. The MA4E2502L-1246 has lower capacitance (0.12pF vs. ~0.3pF) and different bond pad layout, requiring re-optimization of transmission line impedance and ground return paths. To mitigate RF performance degradation, reduce bond wire lengths and use grounded coplanar waveguide structures. Re-simulate the matching network using EM tools, as even minor inductance changes can detune the 24 GHz response.
What are the key thermal and reliability risks when operating the MA4E2502L-1246 near its 50 mW powe
Operating the MA4E2502L-1246 near 50 mW in a sealed, low-airflow environment risks thermal runaway due to limited heat dissipation through the die alone. Without a thermal pad, junction temperature must be estimated using the thermal resistance from junction to case (RθJC), which for bare die is typically high (>500°C/W). Use infrared thermography on the substrate or apply power derating above 85°C ambient. To mitigate failure, limit average power to <30 mW in enclosed systems and ensure low thermal resistance mounting with conductive epoxy or direct eutectic bonding.
In a zero-bias detector application at 18 GHz, how does the MA4E2502L-1246’s zero-bias resistance co
The MA4E2502L-1246 exhibits higher zero-bias resistance than the HSMS-286C, resulting in lower junction conductance and improved sensitivity for weak signal detection at 18 GHz. However, this also increases susceptibility to RF burnout and reduces linearity under strong signal conditions. For low-level detection (e.g., -30 dBm and below), the MA4E2502L-1246 provides better SNR, but in high-dynamic-range systems, consider adding a limiter or attenuator to protect the diode. Always validate with load-pull analysis to optimize termination impedance for maximum sensitivity.
What precautions are needed when handling and assembling the MA4E2502L-1246 bare die in a hybrid mic
Despite its MSL 1 (unlimited floor life), the MA4E2502L-1246 is highly sensitive to ESD due to its 5V peak reverse voltage and nanoscale junction. Use Class 0 ESD controls: grounded workstations, ionizers, and conductive tweezers during die placement. Avoid triboelectric charging during handling—never use plastic trays or non-conductive probes. Perform assembly in a <100 V HBM environment and consider on-wafer testing before final integration. Post-assembly, apply a conformal coating to prevent moisture-induced leakage, even though the part is not moisture-sensitive, to protect bond wires and edges.
Quality Assurance (QC)
WINSURE ensures the quality and authenticity of every electronic component through professional inspections and batch sampling, guaranteeing reliable sourcing, stable performance, and compliance with technical specifications, helping customers reduce supply chain risks and confidently use components in production.
Sep 15 2026
