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KS8695PXA3
Electronics Part Number
KS8695PXA3-WXManufacturer
MACOM Technology Solutions
KS8695PXA3
Description
Integrated 10/100 Switch, 289-Pin PBGAInventory
51 Pcs New Original In Stock
10/100 integrated switch, 289-PBGA 19x19; low power consumption; Ethernet networking.
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Minimum 1
Minimum 1
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Basic cost: USD 70.00
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Technical Specifications
Category
Diodes, RF Diodes
Manufacturer
MACOM Technology Solutions
Packaging
Tape & Reel (TR)
Operating Temperature
-65°C ~ 125°C
Package / Case
SC-70, SOT-323
Series
MA4E2054
Base Product Number
MA4E2054
Product Status
Active
Supplier Device Package
SOT-323
Current - Max
20 mA
Power Dissipation (Max)
75 mW
Diode Type
Schottky - 1 Pair Series Connection
Capacitance @ Vr, F
0.3pF @ 0V, 1MHz
Voltage - Peak Reverse (Max)
3V
Resistance @ If, F
-
Data Sheet Document (D)
Datasheets
Download MA4E2054B1-1146T Product Specification (PDF)
HTML Datasheet
MA4E2054B1-1146T-DG
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.10.0060
Additional Information
Other Names
1465-MA4E2054B1-1146T-DG 1465-MA4E2054B1-1146TTR 1465-MA4E2054B1-1146TCT 1465-MA4E2054B1-1146TDKR
Standard Package
3,000
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Frequently Asked Questions (FAQ)
What are the key reliability risks when using the MA4E2054B1-1146T in high-temperature RF switching
Operating the MA4E2054B1-1146T near its 125°C maximum junction temperature significantly accelerates Schottky barrier degradation and increases reverse leakage current, which can lead to thermal runaway in series-connected configurations. To mitigate this, ensure adequate PCB copper area for heat dissipation, avoid prolonged DC bias at high ambient temperatures, and consider derating the 3V reverse voltage by at least 20% above 85°C. For mission-critical designs above 100°C, monitor long-term leakage drift and consider redundancy or alternative packages with better thermal performance like SOT-23.
Can the MA4E2054B1-1146T be safely substituted for the Skyworks SMS7630-079LF in low-power RF detect
While both the MA4E2054B1-1146T and Skyworks SMS7630-079LF are zero-bias Schottky diodes suitable for RF detection, the MA4E2054B1-1146T has a slightly higher junction capacitance (0.3pF vs. 0.15pF) and lower maximum reverse voltage (3V vs. 6V), making it less ideal for higher-frequency (>5 GHz) or higher-input-power applications. You may observe reduced sensitivity above 3 GHz and increased susceptibility to ESD or voltage transients. If your design operates below 2.5 GHz and within 2V reverse bias, the substitution is generally acceptable, but validate linearity and noise figure in your specific circuit.
How does the series-connected diode pair in the MA4E2054B1-1146T affect impedance matching and inser
The internal series connection of the two Schottky diodes in the MA4E2054B1-1146T effectively doubles the junction capacitance seen by the RF signal, resulting in approximately 0.6pF total capacitive reactance (~100 Ω at 2.4 GHz). This can cause significant impedance mismatch if not accounted for in matching networks. To minimize insertion loss, use a shunt inductive stub or integrate a small series inductor (e.g., 3–5 nH) to resonate out the capacitance. Always simulate the full S-parameter model (if available) or measure S21 in your layout, as parasitic inductance from the SOT-323 package also impacts high-frequency performance.
Is the MA4E2054B1-1146T suitable for use in battery-powered IoT devices where reverse leakage curren
The MA4E2054B1-1146T exhibits very low reverse leakage (typically <10 nA at 25°C), making it generally acceptable for low-power IoT applications. However, leakage increases exponentially with temperature—expect ~100 nA at 85°C—which may become significant in always-on RF sensing nodes with long sleep cycles. If your system draws <1 µA average current, even elevated leakage could represent >10% of total budget. Consider adding a low-leakage PIN diode switch in series or evaluate alternatives like the Avago HSMS-285x series, which offer lower high-temp leakage, albeit with reduced frequency response.
What layout and grounding practices are critical when integrating the MA4E2054B1-1146T into a multi-
Due to the MA4E2054B1-1146T’s high sensitivity and low junction capacitance, poor grounding or long return paths can create parasitic feedback loops leading to oscillation, especially above 1 GHz. Use a solid ground plane directly beneath the SOT-323 package, minimize trace lengths to <2 mm, and place a local ground via within 1 mm of each ground pin. Avoid routing digital or high-speed signals near the diode path, as nonlinear rectification of noise can demodulate RF into baseband interference. For detector applications, add a small RC low-pass filter (e.g., 100 Ω + 10 pF) at the output to suppress high-frequency feedthrough and stabilize DC output.
What are the key reliability risks when using the MA4E2054B1-1146T in high-temperature RF switching
Operating the MA4E2054B1-1146T near its 125°C maximum junction temperature significantly accelerates Schottky barrier degradation and increases reverse leakage current, which can lead to thermal runaway in series-connected configurations. To mitigate this, ensure adequate PCB copper area for heat dissipation, avoid prolonged DC bias at high ambient temperatures, and consider derating the 3V reverse voltage by at least 20% above 85°C. For mission-critical designs above 100°C, monitor long-term leakage drift and consider redundancy or alternative packages with better thermal performance like SOT-23.
Can the MA4E2054B1-1146T be safely substituted for the Skyworks SMS7630-079LF in low-power RF detect
While both the MA4E2054B1-1146T and Skyworks SMS7630-079LF are zero-bias Schottky diodes suitable for RF detection, the MA4E2054B1-1146T has a slightly higher junction capacitance (0.3pF vs. 0.15pF) and lower maximum reverse voltage (3V vs. 6V), making it less ideal for higher-frequency (>5 GHz) or higher-input-power applications. You may observe reduced sensitivity above 3 GHz and increased susceptibility to ESD or voltage transients. If your design operates below 2.5 GHz and within 2V reverse bias, the substitution is generally acceptable, but validate linearity and noise figure in your specific circuit.
How does the series-connected diode pair in the MA4E2054B1-1146T affect impedance matching and inser
The internal series connection of the two Schottky diodes in the MA4E2054B1-1146T effectively doubles the junction capacitance seen by the RF signal, resulting in approximately 0.6pF total capacitive reactance (~100 Ω at 2.4 GHz). This can cause significant impedance mismatch if not accounted for in matching networks. To minimize insertion loss, use a shunt inductive stub or integrate a small series inductor (e.g., 3–5 nH) to resonate out the capacitance. Always simulate the full S-parameter model (if available) or measure S21 in your layout, as parasitic inductance from the SOT-323 package also impacts high-frequency performance.
Is the MA4E2054B1-1146T suitable for use in battery-powered IoT devices where reverse leakage curren
The MA4E2054B1-1146T exhibits very low reverse leakage (typically <10 nA at 25°C), making it generally acceptable for low-power IoT applications. However, leakage increases exponentially with temperature—expect ~100 nA at 85°C—which may become significant in always-on RF sensing nodes with long sleep cycles. If your system draws <1 µA average current, even elevated leakage could represent >10% of total budget. Consider adding a low-leakage PIN diode switch in series or evaluate alternatives like the Avago HSMS-285x series, which offer lower high-temp leakage, albeit with reduced frequency response.
What layout and grounding practices are critical when integrating the MA4E2054B1-1146T into a multi-
Due to the MA4E2054B1-1146T’s high sensitivity and low junction capacitance, poor grounding or long return paths can create parasitic feedback loops leading to oscillation, especially above 1 GHz. Use a solid ground plane directly beneath the SOT-323 package, minimize trace lengths to <2 mm, and place a local ground via within 1 mm of each ground pin. Avoid routing digital or high-speed signals near the diode path, as nonlinear rectification of noise can demodulate RF into baseband interference. For detector applications, add a small RC low-pass filter (e.g., 100 Ω + 10 pF) at the output to suppress high-frequency feedthrough and stabilize DC output.
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Sep 15 2026
