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FDMS9600S

Electronics Part Number

FDMS9600S-WX

Manufacturer

onsemi
FDMS9600S

Description

Dual N-channel MOSFET, 30V 12A, 8MLP Power56.

Inventory

213 Pcs New Original In Stock
MOSFET array, 8-MLP Power56, 30V, 12A/16A, 1W; compact dual-FET power stage.
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Technical Specifications

Category Transistors, Bipolar (BJT), Bipolar RF Transistors

Manufacturer onsemi

Packaging -

Operating Temperature 150°C (TJ)

Mounting Type Surface Mount

Package / Case TO-236-3, SC-59, SOT-23-3

Series -

Base Product Number KSC3123

Product Status Obsolete

Gain 20dB ~ 23dB

Power - Max 150mW

Supplier Device Package SOT-23-3

Voltage - Collector Emitter Breakdown (Max) 20V

Current - Collector (Ic) (Max) 50mA

Transistor Type NPN

DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 5mA, 10V

Frequency - Transition 1.4GHz

Noise Figure (dB Typ @ f) 3.8dB ~ 5.5dB @ 200MHz

Data Sheet Document (D)

Datasheets Download KSC3123OMTF Product Specification (PDF)

HTML Datasheet KSC3123OMTF-DG

Environmental & Export Classification

Moisture Sensitivity Level (MSL) 1 (Unlimited)

REACH Status REACH Unaffected

ECCN EAR99

HTSUS 8541.21.0075

Additional Information

Standard Package 3,000

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Frequently Asked Questions (FAQ)

FAQ Icon

Can I use the KSC3123OMTF as a drop-in replacement for the BFP405H6327XTSA1 in a 1.2 GHz low-noise a

While both the KSC3123OMTF and BFP405H6327XTSA1 are NPN RF transistors in SOT-23 packages with similar transition frequencies (1.4 GHz vs. 1.5 GHz), they are not direct drop-in replacements due to critical differences in noise figure and gain stability. The KSC3123OMTF has a higher typical noise figure (3.8–5.5 dB @ 200 MHz) compared to the BFP405’s sub-2 dB performance, which may degrade receiver sensitivity in sensitive LNA applications. Additionally, the KSC3123OMTF’s lower maximum collector current (50 mA vs. 80 mA) limits its use in higher-bias designs. If replacing, re-tune input/output matching networks and verify stability across temperature, as the KSC3123OMTF’s hFE variation (min 90 @ 5mA) can affect gain flatness. Always validate with network analyzer measurements.
FAQ Icon

What are the reliability risks of continuing to design with the KSC3123OMTF given its obsolete statu

Using the obsolete KSC3123OMTF introduces significant long-term risks, including sudden last-time buy deadlines, counterfeit parts, and lack of manufacturer support. Although onsemi lists 12,100 units in stock, this inventory is finite and not replenishable. To mitigate risk, immediately qualify one or more of the recommended substitutes (e.g., BFP720FESDH6327XTSA1 or MT3S16U) using the same PCB footprint and bias conditions. Perform side-by-side RF performance testing—especially noise figure and gain compression—at your operating frequency. Additionally, consider adding a second-source clause in your BOM and maintain a buffer stock if redesign isn’t feasible short-term. Document all test results to support future compliance audits.
FAQ Icon

How does the KSC3123OMTF’s 150mW power dissipation limit impact thermal design in densely packed RF

With only 150mW max power dissipation and no thermal pad, the KSC3123OMTF is highly sensitive to thermal buildup in compact layouts. In dense RF modules, adjacent components or ground planes can elevate ambient temperature, pushing TJ toward the 150°C limit even at modest bias currents. To minimize risk, use a 4-layer PCB with an internal ground plane connected to the emitter pin via multiple vias to act as a heat spreader. Keep copper pour under the device minimal unless thermally connected, and avoid placing heat-generating components (e.g., power amplifiers) within 5 mm. Monitor TJ using the formula TJ = TA + (PD × RθJA), where RθJA is ~357°C/W for SOT-23—even 100mW can raise TJ by over 35°C in still air.
FAQ Icon

Is the KSC3123OMTF suitable for battery-powered RF sensor nodes operating at 433 MHz, considering it

The KSC3123OMTF can work in 433 MHz sensor nodes, but its noise figure (3.8–5.5 dB) is suboptimal for ultra-low-power receivers where every dB impacts range and battery life. At low Vce (e.g., <3V), the DC current gain (hFE) may drop below the specified 90 minimum, reducing gain and potentially causing instability in feedback-biased stages. For battery efficiency, bias near 5mA collector current to balance gain and power. However, consider the BFP720FESDH6327XTSA1 instead—it offers better noise performance (<2 dB) and stable hFE down to 1V Vce, extending battery life. If committed to the KSC3123OMTF, implement AGC and validate link budget with real-world packet error rate testing.
FAQ Icon

When replacing the KSC3123OMTF with the 2SC4915-O,LF in a legacy VHF transmitter circuit, what circu

Replacing the KSC3123OMTF with the 2SC4915-O,LF requires careful re-biasing and impedance matching due to differences in Ft (1.4 GHz vs. 800 MHz) and package parasitics. The 2SC4915 has lower transition frequency, which may reduce gain above 500 MHz and increase harmonic generation if output matching isn’t adjusted. You’ll likely need to retune the collector matching network to restore power transfer and add or adjust harmonic filters to meet regulatory emissions. Also, verify stability—the 2SC4915’s higher input capacitance can cause oscillation without proper base stopper resistors. Always perform load-pull analysis or S-parameter simulation if possible, and conduct conducted emissions testing to ensure compliance.
FAQ Icon

Can I use the KSC3123OMTF as a drop-in replacement for the BFP405H6327XTSA1 in a 1.2 GHz low-noise a

While both the KSC3123OMTF and BFP405H6327XTSA1 are NPN RF transistors in SOT-23 packages with similar transition frequencies (1.4 GHz vs. 1.5 GHz), they are not direct drop-in replacements due to critical differences in noise figure and gain stability. The KSC3123OMTF has a higher typical noise figure (3.8–5.5 dB @ 200 MHz) compared to the BFP405’s sub-2 dB performance, which may degrade receiver sensitivity in sensitive LNA applications. Additionally, the KSC3123OMTF’s lower maximum collector current (50 mA vs. 80 mA) limits its use in higher-bias designs. If replacing, re-tune input/output matching networks and verify stability across temperature, as the KSC3123OMTF’s hFE variation (min 90 @ 5mA) can affect gain flatness. Always validate with network analyzer measurements.
FAQ Icon

What are the reliability risks of continuing to design with the KSC3123OMTF given its obsolete statu

Using the obsolete KSC3123OMTF introduces significant long-term risks, including sudden last-time buy deadlines, counterfeit parts, and lack of manufacturer support. Although onsemi lists 12,100 units in stock, this inventory is finite and not replenishable. To mitigate risk, immediately qualify one or more of the recommended substitutes (e.g., BFP720FESDH6327XTSA1 or MT3S16U) using the same PCB footprint and bias conditions. Perform side-by-side RF performance testing—especially noise figure and gain compression—at your operating frequency. Additionally, consider adding a second-source clause in your BOM and maintain a buffer stock if redesign isn’t feasible short-term. Document all test results to support future compliance audits.
FAQ Icon

How does the KSC3123OMTF’s 150mW power dissipation limit impact thermal design in densely packed RF

With only 150mW max power dissipation and no thermal pad, the KSC3123OMTF is highly sensitive to thermal buildup in compact layouts. In dense RF modules, adjacent components or ground planes can elevate ambient temperature, pushing TJ toward the 150°C limit even at modest bias currents. To minimize risk, use a 4-layer PCB with an internal ground plane connected to the emitter pin via multiple vias to act as a heat spreader. Keep copper pour under the device minimal unless thermally connected, and avoid placing heat-generating components (e.g., power amplifiers) within 5 mm. Monitor TJ using the formula TJ = TA + (PD × RθJA), where RθJA is ~357°C/W for SOT-23—even 100mW can raise TJ by over 35°C in still air.
FAQ Icon

Is the KSC3123OMTF suitable for battery-powered RF sensor nodes operating at 433 MHz, considering it

The KSC3123OMTF can work in 433 MHz sensor nodes, but its noise figure (3.8–5.5 dB) is suboptimal for ultra-low-power receivers where every dB impacts range and battery life. At low Vce (e.g., <3V), the DC current gain (hFE) may drop below the specified 90 minimum, reducing gain and potentially causing instability in feedback-biased stages. For battery efficiency, bias near 5mA collector current to balance gain and power. However, consider the BFP720FESDH6327XTSA1 instead—it offers better noise performance (<2 dB) and stable hFE down to 1V Vce, extending battery life. If committed to the KSC3123OMTF, implement AGC and validate link budget with real-world packet error rate testing.
FAQ Icon

When replacing the KSC3123OMTF with the 2SC4915-O,LF in a legacy VHF transmitter circuit, what circu

Replacing the KSC3123OMTF with the 2SC4915-O,LF requires careful re-biasing and impedance matching due to differences in Ft (1.4 GHz vs. 800 MHz) and package parasitics. The 2SC4915 has lower transition frequency, which may reduce gain above 500 MHz and increase harmonic generation if output matching isn’t adjusted. You’ll likely need to retune the collector matching network to restore power transfer and add or adjust harmonic filters to meet regulatory emissions. Also, verify stability—the 2SC4915’s higher input capacitance can cause oscillation without proper base stopper resistors. Always perform load-pull analysis or S-parameter simulation if possible, and conduct conducted emissions testing to ensure compliance.

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