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FDMS8860AS
Electronics Part Number
FDMS8860AS-WX
FDMS8860AS
Description
N-channel MOSFET integrated device.Inventory
6 Pcs New Original In Stock
MOSFET array; integrated multiple transistors for compact power management.
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Minimum 1
Minimum 1
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Basic cost: USD 70.00
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Technical Specifications
Category
Transistors, Bipolar (BJT), Bipolar RF Transistors
Manufacturer
Packaging
Bulk
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Series
-
Base Product Number
KSP10
Product Status
Active
Gain
-
Power - Max
350mW
Supplier Device Package
TO-92-3
Voltage - Collector Emitter Breakdown (Max)
25V
Current - Collector (Ic) (Max)
-
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 4mA, 10V
Frequency - Transition
650MHz
Noise Figure (dB Typ @ f)
-
Data Sheet Document (D)
Datasheets
Download KSP10BU Product Specification (PDF)
HTML Datasheet
KSP10BU-DG
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8542.39.0001
Additional Information
Other Names
2156-KSP10BU FAIFSCKSP10BU
Standard Package
7,036
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Frequently Asked Questions (FAQ)
Can the KSP10BU be used as a drop-in replacement for the BFP540FESDH6327XTSA1 in a 500MHz RF amplifi
The KSP10BU can serve as a functional substitute for the BFP540FESDH6327XTSA1 in 500MHz RF amplifier applications, but it's not a direct drop-in replacement due to differences in gain profile and package parasitics. The BFP540 offers higher transition frequency (9GHz vs. 650MHz) and better noise performance, making it superior in low-noise, high-gain stages. The KSP10BU, while limited in bandwidth, provides sufficient gain at lower RF frequencies with better thermal tolerance in TO-92. To mitigate performance loss, ensure impedance matching networks are recalibrated for the KSP10BU’s lower hFE and fT. Use in less demanding RF stages like drivers or buffers where signal integrity isn’t critically sensitive.
What are the risks of using the KSP10BU in a high-temperature environment near 125°C ambient, and ho
When operating the KSP10BU in ambient temperatures approaching 125°C, thermal runaway is a key risk due to reduced Hfe and increased leakage current at elevated junction temperatures. Since the KSP10BU is housed in a TO-92 package with limited thermal dissipation (350mW max), power derating is essential — operate below 200mW above 75°C ambient. Ensure PCB copper acts as a heatsink via generous trace connections to collector and emitter. Long-term reliability diminishes if TJ consistently exceeds 125°C; lifetime can drop by 50% compared to operation at 85°C. Monitor actual operating Vce and Ic in-circuit and include thermal margin in your design.
How does the KSP10BU compare to the 2SC5087R(TE85L,F) in VHF oscillator circuits, and under what con
In VHF oscillator designs around 200–400MHz, the KSP10BU offers comparable fT (650MHz) to the 2SC5087R but with lower DC current gain consistency and higher variability in parasitic capacitance due to through-hole construction. The 2SC5087R, in a surface-mount package, provides tighter parameter matching and reduced lead inductance, improving frequency stability and startup reliability. Use the KSP10BU in prototyping or low-volume designs where through-hole assembly is preferred, but switch to the 2SC5087R in production for better EMI control and phase noise performance. Ensure layout accounts for TO-92 lead length ringing in high dv/dt oscillator feedback paths.
What design-in considerations should I follow when replacing the BFP196E6327HTSA1 with the KSP10BU i
Replacing the BFP196E6327HTSA1 — a high-frequency, low-noise MMIC-grade BJT — with the KSP10BU introduces limitations in noise figure and bandwidth. The KSP10BU lacks specified noise performance, typically resulting in 3–5dB higher NF at 100MHz compared to the BFP196. To minimize degradation, bias the KSP10BU at 2–5mA (within its optimal hFE range) and use emitter degeneration for stability. Avoid using it in first-stage LNAs; instead, apply KSP10BU in gain stages where noise impact is less critical. Also, shield the TO-92 package from stray coupling in high-impedance input networks.
What are the PCB layout best practices for minimizing parasitic oscillation when using the KSP10BU i
To prevent parasitic oscillation with the KSP10BU in RF switching circuits up to 400MHz, minimize lead length in through-hole mounting—trim leads to <3mm post-soldering. Use ground planes beneath and short, direct routing to biasing components to reduce inductance. Place a 10–100Ω base stopper resistor as close as possible to the base pin to suppress ringing. Avoid running high-speed signals near the collector node without shielding. Additionally, decouple the supply with a 100nF ceramic capacitor in parallel with 10μF tantalum, placed near the device. These steps mitigate the TO-92 package’s inherent parasitics, which can resonate with circuit nodes at VHF frequencies.
Can the KSP10BU be used as a drop-in replacement for the BFP540FESDH6327XTSA1 in a 500MHz RF amplifi
The KSP10BU can serve as a functional substitute for the BFP540FESDH6327XTSA1 in 500MHz RF amplifier applications, but it's not a direct drop-in replacement due to differences in gain profile and package parasitics. The BFP540 offers higher transition frequency (9GHz vs. 650MHz) and better noise performance, making it superior in low-noise, high-gain stages. The KSP10BU, while limited in bandwidth, provides sufficient gain at lower RF frequencies with better thermal tolerance in TO-92. To mitigate performance loss, ensure impedance matching networks are recalibrated for the KSP10BU’s lower hFE and fT. Use in less demanding RF stages like drivers or buffers where signal integrity isn’t critically sensitive.
What are the risks of using the KSP10BU in a high-temperature environment near 125°C ambient, and ho
When operating the KSP10BU in ambient temperatures approaching 125°C, thermal runaway is a key risk due to reduced Hfe and increased leakage current at elevated junction temperatures. Since the KSP10BU is housed in a TO-92 package with limited thermal dissipation (350mW max), power derating is essential — operate below 200mW above 75°C ambient. Ensure PCB copper acts as a heatsink via generous trace connections to collector and emitter. Long-term reliability diminishes if TJ consistently exceeds 125°C; lifetime can drop by 50% compared to operation at 85°C. Monitor actual operating Vce and Ic in-circuit and include thermal margin in your design.
How does the KSP10BU compare to the 2SC5087R(TE85L,F) in VHF oscillator circuits, and under what con
In VHF oscillator designs around 200–400MHz, the KSP10BU offers comparable fT (650MHz) to the 2SC5087R but with lower DC current gain consistency and higher variability in parasitic capacitance due to through-hole construction. The 2SC5087R, in a surface-mount package, provides tighter parameter matching and reduced lead inductance, improving frequency stability and startup reliability. Use the KSP10BU in prototyping or low-volume designs where through-hole assembly is preferred, but switch to the 2SC5087R in production for better EMI control and phase noise performance. Ensure layout accounts for TO-92 lead length ringing in high dv/dt oscillator feedback paths.
What design-in considerations should I follow when replacing the BFP196E6327HTSA1 with the KSP10BU i
Replacing the BFP196E6327HTSA1 — a high-frequency, low-noise MMIC-grade BJT — with the KSP10BU introduces limitations in noise figure and bandwidth. The KSP10BU lacks specified noise performance, typically resulting in 3–5dB higher NF at 100MHz compared to the BFP196. To minimize degradation, bias the KSP10BU at 2–5mA (within its optimal hFE range) and use emitter degeneration for stability. Avoid using it in first-stage LNAs; instead, apply KSP10BU in gain stages where noise impact is less critical. Also, shield the TO-92 package from stray coupling in high-impedance input networks.
What are the PCB layout best practices for minimizing parasitic oscillation when using the KSP10BU i
To prevent parasitic oscillation with the KSP10BU in RF switching circuits up to 400MHz, minimize lead length in through-hole mounting—trim leads to <3mm post-soldering. Use ground planes beneath and short, direct routing to biasing components to reduce inductance. Place a 10–100Ω base stopper resistor as close as possible to the base pin to suppress ringing. Avoid running high-speed signals near the collector node without shielding. Additionally, decouple the supply with a 100nF ceramic capacitor in parallel with 10μF tantalum, placed near the device. These steps mitigate the TO-92 package’s inherent parasitics, which can resonate with circuit nodes at VHF frequencies.
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Sep 15 2026
