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SKY65336-11
Electronics Part Number
SKY65336-11-WXManufacturer
onsemi
SKY65336-11
Description
2.4 GHz Transmit/Receive Front-End Module IC, 28-Pin MCM for WLAN ApplicationsInventory
195 Pcs New Original In Stock
RF front end, 2.4GHz ISM, 28-MCM.
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Minimum 1
Minimum 1
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Basic cost: USD 70.00
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Technical Specifications
Category
Transistors, FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
onsemi
Packaging
-
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Series
-
Base Product Number
NTP13N
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Supplier Device Package
TO-220
Power Dissipation (Max)
64.7W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Input Capacitance (Ciss) (Max) @ Vds
550 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C
13A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
165mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
±20V
FET Feature
-
Data Sheet Document (D)
Datasheets
Download NTP13N10G Product Specification (PDF)
HTML Datasheet
NTP13N10G-DG
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Additional Information
Other Names
NTP13N10GOS
Standard Package
50
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Frequently Asked Questions (FAQ)
Can the NTP13N10G be used as a drop-in replacement for the IRL530PBF in a high-temperature power swi
While the NTP13N10G and IRL530PBF share similar voltage and current ratings (100V, ~12–13A), they are not direct drop-in replacements without design review. The NTP13N10G has a higher Rds(on) of 165mΩ vs. ~100mΩ for the IRL530PBF, leading to higher conduction losses. Additionally, the IRL530PBF is optimized for lower gate drive (4.5V–10V logic levels), whereas the NTP13N10G is intended for 10V drive. In high-temperature environments near 150°C, ensure the NTP13N10G's elevated Rds(on) and reduced safe operating area are accounted for in thermal design. Also note the NTP13N10G is marked as obsolete—consider lifetime supply and potential need for redesign.
What thermal design considerations are critical when operating the NTP13N10G near its maximum juncti
Operating the NTP13N10G near 175°C requires careful thermal management due to its 64.7W power dissipation rating at Tc (case temperature). Achieving this demands an efficient heatsink with low thermal resistance (typically < 2°C/W or better). Ensure the PCB layout includes adequate copper for heat spreading, avoid placing heat-sensitive components nearby, and use thermal interface material with low impedance. Additionally, derate Id and Rds(on) at high temperatures—verify actual continuous current under worst-case ambient conditions to avoid thermal runaway.
How does the gate charge of 20nC at 10V affect switching performance of the NTP13N10G in a high-freq
The NTP13N10G’s 20nC gate charge impacts switching losses significantly above 50 kHz. In high-frequency DC-DC converters, higher Qg increases drive power requirements and switching transition times, leading to reduced efficiency. Pair the NTP13N10G with a capable gate driver (e.g., TC4427 or equivalent) to ensure fast turn-on/turn-off and minimize cross-conduction risks. For designs above 100 kHz, consider lower-Qg MOSFETs (e.g., newer trench types) unless the application prioritizes ruggedness over efficiency.
What are the risks of using the obsolete NTP13N10G in a new product design intended for long-term pr
Using the obsolete NTP13N10G in a new design carries significant supply chain risk—despite current inventory (5,110 pcs), long-term availability is not guaranteed. This can lead to abrupt discontinuations, forcing costly redesigns mid-production. If used, secure multi-year stock or identify second-source alternatives early. Consider modern equivalents like the FQP13N10L or IXTH14N100D (with appropriate derating), ensuring compatibility in Rds(on), SOA, and packaging. Evaluate whether the TO-220 footprint allows drop-in substitution should a redesign be needed.
How does the 4V max Vgs(th) of the NTP13N10G impact its behavior in temperature-varying environments
The NTP13N10G’s Vgs(th) of up to 4V (at 250µA) means turn-on threshold can vary significantly across temperature, especially at cold extremes where it increases. This requires gate drive voltage to exceed 4V by a safe margin—typically 10V as specified—to ensure full enhancement. Avoid driving with 5V logic sources directly; use a level-shifting driver or dedicated MOSFET driver IC to maintain low Rds(on) and prevent erratic switching. In temperature-cycling applications, verify stable operation during startup at -40°C to avoid partial conduction and localized heating.
Can the NTP13N10G be used as a drop-in replacement for the IRL530PBF in a high-temperature power swi
While the NTP13N10G and IRL530PBF share similar voltage and current ratings (100V, ~12–13A), they are not direct drop-in replacements without design review. The NTP13N10G has a higher Rds(on) of 165mΩ vs. ~100mΩ for the IRL530PBF, leading to higher conduction losses. Additionally, the IRL530PBF is optimized for lower gate drive (4.5V–10V logic levels), whereas the NTP13N10G is intended for 10V drive. In high-temperature environments near 150°C, ensure the NTP13N10G's elevated Rds(on) and reduced safe operating area are accounted for in thermal design. Also note the NTP13N10G is marked as obsolete—consider lifetime supply and potential need for redesign.
What thermal design considerations are critical when operating the NTP13N10G near its maximum juncti
Operating the NTP13N10G near 175°C requires careful thermal management due to its 64.7W power dissipation rating at Tc (case temperature). Achieving this demands an efficient heatsink with low thermal resistance (typically < 2°C/W or better). Ensure the PCB layout includes adequate copper for heat spreading, avoid placing heat-sensitive components nearby, and use thermal interface material with low impedance. Additionally, derate Id and Rds(on) at high temperatures—verify actual continuous current under worst-case ambient conditions to avoid thermal runaway.
How does the gate charge of 20nC at 10V affect switching performance of the NTP13N10G in a high-freq
The NTP13N10G’s 20nC gate charge impacts switching losses significantly above 50 kHz. In high-frequency DC-DC converters, higher Qg increases drive power requirements and switching transition times, leading to reduced efficiency. Pair the NTP13N10G with a capable gate driver (e.g., TC4427 or equivalent) to ensure fast turn-on/turn-off and minimize cross-conduction risks. For designs above 100 kHz, consider lower-Qg MOSFETs (e.g., newer trench types) unless the application prioritizes ruggedness over efficiency.
What are the risks of using the obsolete NTP13N10G in a new product design intended for long-term pr
Using the obsolete NTP13N10G in a new design carries significant supply chain risk—despite current inventory (5,110 pcs), long-term availability is not guaranteed. This can lead to abrupt discontinuations, forcing costly redesigns mid-production. If used, secure multi-year stock or identify second-source alternatives early. Consider modern equivalents like the FQP13N10L or IXTH14N100D (with appropriate derating), ensuring compatibility in Rds(on), SOA, and packaging. Evaluate whether the TO-220 footprint allows drop-in substitution should a redesign be needed.
How does the 4V max Vgs(th) of the NTP13N10G impact its behavior in temperature-varying environments
The NTP13N10G’s Vgs(th) of up to 4V (at 250µA) means turn-on threshold can vary significantly across temperature, especially at cold extremes where it increases. This requires gate drive voltage to exceed 4V by a safe margin—typically 10V as specified—to ensure full enhancement. Avoid driving with 5V logic sources directly; use a level-shifting driver or dedicated MOSFET driver IC to maintain low Rds(on) and prevent erratic switching. In temperature-cycling applications, verify stable operation during startup at -40°C to avoid partial conduction and localized heating.
Quality Assurance (QC)
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Sep 15 2026
