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PUMH20,115

Electronics Part Number

PUMH20,115-WX
PUMH20,115

Description

50V Prebias Dual NPN Transistor 6-TSSOP

Inventory

442 Pcs New Original In Stock
6-TSSOP pre-biased dual NPN; 50V, 100mA, 300mW; stable saturation; for low-side switch drivers and peripheral drivers.
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Basic cost: USD 70.00

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Technical Specifications

Category Memory, Batteries

Manufacturer STMicroelectronics

Packaging Tube

Operating Temperature -40°C ~ 85°C

Mounting Type Snap-In

Package / Case Snaphat®

Series Snaphat®

Base Product Number M4Z32

Product Status Active

Function Back-Up Management

Supplier Device Package Snaphat®

Battery Chemistry Lithium

Shipping Info Due to restrictions, only ground shipment is allowed.

Data Sheet Document (D)

Datasheets Download M4Z32-BR00SH1 Product Specification (PDF)

HTML Datasheet M4Z32-BR00SH1-DG

Environmental & Export Classification

RoHS Status ROHS3 Compliant

Moisture Sensitivity Level (MSL) 1 (Unlimited)

REACH Status REACH Unaffected

ECCN EAR99

HTSUS 8504.40.9580

Additional Information

Other Names 497-3690-5 497-3690-5-NDR M4Z32BR00SH1

Standard Package 23

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Frequently Asked Questions (FAQ)

FAQ Icon

Can the M4Z32-BR00SH1 Snaphat® battery backup module be safely used in a 24/7 industrial control sys

The M4Z32-BR00SH1 is rated for operation up to 85°C, but sustained operation near this limit—especially in a 24/7 industrial environment—can accelerate lithium battery self-discharge and reduce overall backup lifespan. While the IC itself remains functional, the integrated 120mAh lithium cell may experience capacity fade over time. For mission-critical systems, consider active thermal management or periodic backup health monitoring. STMicroelectronics recommends derating battery life expectations by ~30% when operating above 70°C to mitigate unexpected data loss during power failure events.
FAQ Icon

What are the key risks when replacing a legacy Dallas DS1230Y-100+ with the M4Z32-BR00SH1 in an exis

Replacing the DS1230Y-100+ with the M4Z32-BR00SH1 requires careful validation of voltage thresholds and switchover timing. The M4Z32-BR00SH1 uses a different internal comparator architecture and has a narrower valid VCC range during switchover. Ensure your SRAM’s minimum operating voltage aligns with the M4Z32’s backup activation threshold (~4.5V typical). Also, verify that the M4Z32’s 120mAh capacity meets your hold-up time requirements under your system’s sleep current—unlike the DS1230Y’s 200mAh cell. Perform a worst-case brownout test at -40°C and 85°C to confirm reliable transition to backup mode.
FAQ Icon

How does the M4Z32-BR00SH1 handle repeated short-duration power interruptions in a solar-powered IoT

The M4Z32-BR00SH1 is designed for infrequent, long-duration backups—not high-cycle scenarios. In solar-powered IoT applications with daily micro-outages, frequent charge/discharge cycles can stress the lithium cell, reducing its effective lifespan despite the low 120mAh capacity. Each cycle contributes to internal resistance growth. To mitigate risk, add a supercapacitor buffer on the VCC line to absorb short interruptions (<1 sec), reserving the M4Z32 for true extended outages. Monitor system sleep current closely; even 10µA draw halves backup time from ~12 days to ~6 days.
FAQ Icon

Is the M4Z32-BR00SH1 a drop-in replacement for the Renesas ISL1208-based backup circuits in terms of

No, the M4Z32-BR00SH1 is not a drop-in replacement for ISL1208-based designs. The ISL1208 is a real-time clock with integrated battery switchover, while the M4Z32-BR00SH1 is a pure backup power manager without clock functions. Mechanically, the Snaphat® package (28SOIC with snap-in battery) differs significantly from typical SOIC-8 or TSSOP packages used with ISL1208. Additionally, the M4Z32 lacks the ISL1208’s alarm and oscillator features. You’ll need to redesign the power path and remove any RTC dependencies unless supplemented externally.
FAQ Icon

Given the M4Z32-BR00SH1’s MSL 1 rating, can I skip baking or dry storage during high-volume PCB asse

Yes, you can skip baking and dry storage—the M4Z32-BR00SH1’s MSL 1 (Unlimited) rating means it’s immune to moisture-induced damage during reflow. However, improper handling (e.g., exposing the lithium cell to static discharge or mechanical stress during snap-in mounting) can compromise seal integrity or trigger internal shorts. Always use ESD-safe tools during installation. Long-term, physical deformation of the Snaphat® package may lead to electrolyte leakage or contact resistance issues. For high-reliability applications, implement a post-assembly continuity test on the backup path and avoid stacking heavy components above the module to prevent mechanical fatigue.
FAQ Icon

Can the M4Z32-BR00SH1 Snaphat® battery backup module be safely used in a 24/7 industrial control sys

The M4Z32-BR00SH1 is rated for operation up to 85°C, but sustained operation near this limit—especially in a 24/7 industrial environment—can accelerate lithium battery self-discharge and reduce overall backup lifespan. While the IC itself remains functional, the integrated 120mAh lithium cell may experience capacity fade over time. For mission-critical systems, consider active thermal management or periodic backup health monitoring. STMicroelectronics recommends derating battery life expectations by ~30% when operating above 70°C to mitigate unexpected data loss during power failure events.
FAQ Icon

What are the key risks when replacing a legacy Dallas DS1230Y-100+ with the M4Z32-BR00SH1 in an exis

Replacing the DS1230Y-100+ with the M4Z32-BR00SH1 requires careful validation of voltage thresholds and switchover timing. The M4Z32-BR00SH1 uses a different internal comparator architecture and has a narrower valid VCC range during switchover. Ensure your SRAM’s minimum operating voltage aligns with the M4Z32’s backup activation threshold (~4.5V typical). Also, verify that the M4Z32’s 120mAh capacity meets your hold-up time requirements under your system’s sleep current—unlike the DS1230Y’s 200mAh cell. Perform a worst-case brownout test at -40°C and 85°C to confirm reliable transition to backup mode.
FAQ Icon

How does the M4Z32-BR00SH1 handle repeated short-duration power interruptions in a solar-powered IoT

The M4Z32-BR00SH1 is designed for infrequent, long-duration backups—not high-cycle scenarios. In solar-powered IoT applications with daily micro-outages, frequent charge/discharge cycles can stress the lithium cell, reducing its effective lifespan despite the low 120mAh capacity. Each cycle contributes to internal resistance growth. To mitigate risk, add a supercapacitor buffer on the VCC line to absorb short interruptions (<1 sec), reserving the M4Z32 for true extended outages. Monitor system sleep current closely; even 10µA draw halves backup time from ~12 days to ~6 days.
FAQ Icon

Is the M4Z32-BR00SH1 a drop-in replacement for the Renesas ISL1208-based backup circuits in terms of

No, the M4Z32-BR00SH1 is not a drop-in replacement for ISL1208-based designs. The ISL1208 is a real-time clock with integrated battery switchover, while the M4Z32-BR00SH1 is a pure backup power manager without clock functions. Mechanically, the Snaphat® package (28SOIC with snap-in battery) differs significantly from typical SOIC-8 or TSSOP packages used with ISL1208. Additionally, the M4Z32 lacks the ISL1208’s alarm and oscillator features. You’ll need to redesign the power path and remove any RTC dependencies unless supplemented externally.
FAQ Icon

Given the M4Z32-BR00SH1’s MSL 1 rating, can I skip baking or dry storage during high-volume PCB asse

Yes, you can skip baking and dry storage—the M4Z32-BR00SH1’s MSL 1 (Unlimited) rating means it’s immune to moisture-induced damage during reflow. However, improper handling (e.g., exposing the lithium cell to static discharge or mechanical stress during snap-in mounting) can compromise seal integrity or trigger internal shorts. Always use ESD-safe tools during installation. Long-term, physical deformation of the Snaphat® package may lead to electrolyte leakage or contact resistance issues. For high-reliability applications, implement a post-assembly continuity test on the backup path and avoid stacking heavy components above the module to prevent mechanical fatigue.

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