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MQ2N4091UB/TR
Electronics Part Number
MQ2N4091UB/TR-WXManufacturer
Littelfuse
MQ2N4091UB/TR
Description
N-channel JFET, 40V, UB package.Inventory
902 Pcs New Original In Stock
N-channel JFET, surface mount UB, 40V, 360mW; low-noise switching and amplification.
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Minimum 1
Minimum 1
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Basic cost: USD 70.00
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Technical Specifications
Category
Transistors, IGBTs, Single IGBTs
Manufacturer
Littelfuse
Packaging
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Series
HiPerFAST™
Base Product Number
IXSH24
Product Status
Obsolete
Power - Max
150 W
Input Type
Standard
Supplier Device Package
TO-247AD
Test Condition
480V, 24A, 10Ohm, 15V
Voltage - Collector Emitter Breakdown (Max)
600 V
Current - Collector (Ic) (Max)
48 A
IGBT Type
-
Current - Collector Pulsed (Icm)
96 A
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 24A
Switching Energy
2mJ (off)
Gate Charge
75 nC
Td (on/off) @ 25°C
100ns/450ns
Reverse Recovery Time (trr)
50 ns
Data Sheet Document (D)
Datasheets
Download IXSH24N60U1 Product Specification (PDF)
HTML Datasheet
IXSH24N60U1-DG
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Additional Information
Standard Package
30
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Frequently Asked Questions (FAQ)
Is the IXSH24N60U1 still a viable choice for new power supply designs despite being marked as obsole
No, the IXSH24N60U1 should not be used in new designs due to its obsolete status, which indicates discontinued manufacturing and lack of future support. While existing inventory may be available, relying on it introduces supply chain risk and prevents qualification under modern reliability standards. Designers should transition to recommended substitutes like the IXXH30N60B3D1 or STGFW20V60DF, which offer improved performance, active production status, and full manufacturer backing for long-term availability.
Can I safely replace the IXSH24N60U1 with the IXXH30N60B3D1 in an existing motor drive circuit witho
Yes, but with caution. The IXXH30N60B3D1 has a similar 600V rating and TO-247AD package, but its gate charge (68 nC vs. 75 nC) and switching energy are lower, which may cause faster switching edges. This can increase EMI and voltage overshoot if the original gate resistor isn’t adjusted. Verify that your gate driver can source/sink sufficient current and consider reducing the gate resistor slightly to maintain controlled dv/dt. Always validate thermal and switching performance under worst-case load conditions.
What are the key reliability risks when operating the IXSH24N60U1 near its 150W power limit in a hig
Operating the IXSH24N60U1 near its 150W limit in high ambient temperatures significantly increases the risk of thermal runaway and premature failure. With a junction-to-case thermal resistance of ~0.83°C/W (estimated from 150W max at 150°C Tj), even a 50°C ambient can push the junction close to its 150°C limit without an oversized heatsink. Ensure robust thermal management with forced airflow or a low-Rth heatsink, and derate power by at least 20–30% for ambient temperatures above 40°C to maintain long-term reliability.
How does the reverse recovery time (trr) of the IXSH24N60U1 impact efficiency in a hard-switched inv
The IXSH24N60U1’s 50 ns reverse recovery time is relatively slow compared to modern field-stop devices like the STGFW20V60DF (trr ~25 ns), leading to higher switching losses during turn-on, especially in hard-switched topologies such as motor drives or PFC stages. This increases thermal stress and reduces overall system efficiency. If efficiency is critical, consider migrating to a faster IGBT with lower trr and softer recovery characteristics, even if it requires adjusting the dead-time and gate drive settings.
Can the IXSH24N60U1 be used in a 400V DC bus application with inductive loads without an external fr
No, the IXSH24N60U1 should never be used without an external freewheeling diode in inductive load applications, even on a 400V bus. While it has a built-in body diode, its reverse recovery characteristics are not optimized for continuous freewheeling, and the 50 ns trr can lead to high reverse recovery current spikes during commutation. This increases switching stress, EMI, and risk of device failure. Always use a fast-recovery external diode (e.g., SiC Schottky) in anti-parallel to protect the IXSH24N60U1 and improve overall circuit robustness.
Is the IXSH24N60U1 still a viable choice for new power supply designs despite being marked as obsole
No, the IXSH24N60U1 should not be used in new designs due to its obsolete status, which indicates discontinued manufacturing and lack of future support. While existing inventory may be available, relying on it introduces supply chain risk and prevents qualification under modern reliability standards. Designers should transition to recommended substitutes like the IXXH30N60B3D1 or STGFW20V60DF, which offer improved performance, active production status, and full manufacturer backing for long-term availability.
Can I safely replace the IXSH24N60U1 with the IXXH30N60B3D1 in an existing motor drive circuit witho
Yes, but with caution. The IXXH30N60B3D1 has a similar 600V rating and TO-247AD package, but its gate charge (68 nC vs. 75 nC) and switching energy are lower, which may cause faster switching edges. This can increase EMI and voltage overshoot if the original gate resistor isn’t adjusted. Verify that your gate driver can source/sink sufficient current and consider reducing the gate resistor slightly to maintain controlled dv/dt. Always validate thermal and switching performance under worst-case load conditions.
What are the key reliability risks when operating the IXSH24N60U1 near its 150W power limit in a hig
Operating the IXSH24N60U1 near its 150W limit in high ambient temperatures significantly increases the risk of thermal runaway and premature failure. With a junction-to-case thermal resistance of ~0.83°C/W (estimated from 150W max at 150°C Tj), even a 50°C ambient can push the junction close to its 150°C limit without an oversized heatsink. Ensure robust thermal management with forced airflow or a low-Rth heatsink, and derate power by at least 20–30% for ambient temperatures above 40°C to maintain long-term reliability.
How does the reverse recovery time (trr) of the IXSH24N60U1 impact efficiency in a hard-switched inv
The IXSH24N60U1’s 50 ns reverse recovery time is relatively slow compared to modern field-stop devices like the STGFW20V60DF (trr ~25 ns), leading to higher switching losses during turn-on, especially in hard-switched topologies such as motor drives or PFC stages. This increases thermal stress and reduces overall system efficiency. If efficiency is critical, consider migrating to a faster IGBT with lower trr and softer recovery characteristics, even if it requires adjusting the dead-time and gate drive settings.
Can the IXSH24N60U1 be used in a 400V DC bus application with inductive loads without an external fr
No, the IXSH24N60U1 should never be used without an external freewheeling diode in inductive load applications, even on a 400V bus. While it has a built-in body diode, its reverse recovery characteristics are not optimized for continuous freewheeling, and the 50 ns trr can lead to high reverse recovery current spikes during commutation. This increases switching stress, EMI, and risk of device failure. Always use a fast-recovery external diode (e.g., SiC Schottky) in anti-parallel to protect the IXSH24N60U1 and improve overall circuit robustness.
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Sep 15 2026
