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MMRF1308HR5
Electronics Part Number
MMRF1308HR5-WXManufacturer
onsemi
MMRF1308HR5
Description
50V LDMOS RF MOSFET in NI1230 package.Inventory
755 Pcs New Original In Stock
RF MOSFET, NI-1230-4H, 50V, 230MHz, 25dB gain, 600W; robust RF power amplifier.
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Basic cost: USD 70.00
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Technical Specifications
Category
Transistors, Bipolar (BJT), Bipolar RF Transistors
Manufacturer
onsemi
Packaging
-
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Series
-
Base Product Number
KSC3123
Product Status
Obsolete
Gain
20dB ~ 23dB
Power - Max
150mW
Supplier Device Package
SOT-23-3
Voltage - Collector Emitter Breakdown (Max)
20V
Current - Collector (Ic) (Max)
50mA
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 5mA, 10V
Frequency - Transition
1.4GHz
Noise Figure (dB Typ @ f)
3.8dB ~ 5.5dB @ 200MHz
Data Sheet Document (D)
Datasheets
Download KSC3123RMTF Product Specification (PDF)
HTML Datasheet
KSC3123RMTF-DG
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Additional Information
Standard Package
3,000
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Frequently Asked Questions (FAQ)
Can I use the KSC3123RMTF in a 1.2 GHz low-noise amplifier design, and what are the key risks if I o
The KSC3123RMTF can be used in a 1.2 GHz LNA, but operating near its 1.4 GHz fT limit introduces gain roll-off, phase instability, and increased sensitivity to parasitic inductance or capacitance. At 1.2 GHz, expect reduced gain margin (closer to 20 dB than 23 dB), and ensure tight PCB layout with ground planes and short traces to minimize oscillations. Thermal management is critical—even at 150mW max power, self-heating at high frequencies can degrade hFE and noise figure. Always simulate with S-parameters and validate with network analyzer measurements.
Is the KSC3123RMTF suitable as a drop-in replacement for the BFP740H6327XTSA1 in a 900 MHz RF front-
While both are SOT-23 NPN RF transistors, the KSC3123RMTF is not a direct performance-equivalent drop-in for the BFP740H6327XTSA1. The BFP740 offers lower noise figure (~1.5 dB vs. 3.8–5.5 dB for KSC3123RMTF) and higher fT (6 GHz), making it better for ultra-low-noise applications. Replacing it with the KSC3123RMTF may increase system noise by 2–4 dB, potentially reducing receiver sensitivity. Additionally, the KSC3123RMTF’s lower current capability (50mA vs. 80mA) may limit linearity in high-drive scenarios. Re-tune matching networks and verify NF and IP3 in your actual circuit before committing.
Given that the KSC3123RMTF is marked as obsolete by onsemi, what long-term supply chain and reliabil
Designing in an obsolete part like the KSC3123RMTF poses significant long-term risks: no new production, limited distributor stock (currently ~3200 pcs), and potential for counterfeit or degraded inventory. Even though MSL 1 allows unlimited floor life, long storage can still affect solderability and parametric drift. For new designs, strongly consider pin-compatible, active alternatives like the BFR740L3RHE6327XTSA1 or PH3135-5S. If you must use the KSC3123RMTF, secure a lifetime buy, implement rigorous incoming inspection, and design the PCB to allow easy substitution with a modern equivalent.
How does the KSC3123RMTF’s noise figure of 3.8–5.5 dB at 200 MHz impact its usability in a sensitive
The KSC3123RMTF’s noise figure (NF) of 3.8–5.5 dB at 200 MHz is marginal for high-sensitivity VHF receivers, where sub-2 dB NF is often desired. While optimal biasing (typically 5–10 mA Ic) and conjugate matching at the input can minimize NF toward the 3.8 dB end, you cannot overcome the device’s inherent limitations. Consider using a dedicated low-noise transistor like the BFR182WH6327XTSA1 (NF ~1.2 dB) instead. If locked into the KSC3123RMTF, use a low-noise preamp stage before it or accept reduced sensitivity—especially problematic in weak-signal environments.
What layout and decoupling practices are critical when integrating the KSC3123RMTF in a high-frequen
Stable operation of the KSC3123RMTF above 500 MHz demands strict RF layout practices: use a solid ground plane beneath the SOT-23-3 package, keep input/output traces short and impedance-controlled (50 Ω), and place DC blocking and bypass capacitors (e.g., 100 pF + 10 nF) within 2 mm of the pins. Avoid shared return paths between input and output to prevent feedback. Add a small ferrite bead or series resistor (10–47 Ω) at the collector if gain peaking occurs. Always include test points for S11/S22 monitoring—unstable KSC3123RMTF circuits often oscillate just outside the intended band due to package parasitics and poor grounding.
Can I use the KSC3123RMTF in a 1.2 GHz low-noise amplifier design, and what are the key risks if I o
The KSC3123RMTF can be used in a 1.2 GHz LNA, but operating near its 1.4 GHz fT limit introduces gain roll-off, phase instability, and increased sensitivity to parasitic inductance or capacitance. At 1.2 GHz, expect reduced gain margin (closer to 20 dB than 23 dB), and ensure tight PCB layout with ground planes and short traces to minimize oscillations. Thermal management is critical—even at 150mW max power, self-heating at high frequencies can degrade hFE and noise figure. Always simulate with S-parameters and validate with network analyzer measurements.
Is the KSC3123RMTF suitable as a drop-in replacement for the BFP740H6327XTSA1 in a 900 MHz RF front-
While both are SOT-23 NPN RF transistors, the KSC3123RMTF is not a direct performance-equivalent drop-in for the BFP740H6327XTSA1. The BFP740 offers lower noise figure (~1.5 dB vs. 3.8–5.5 dB for KSC3123RMTF) and higher fT (6 GHz), making it better for ultra-low-noise applications. Replacing it with the KSC3123RMTF may increase system noise by 2–4 dB, potentially reducing receiver sensitivity. Additionally, the KSC3123RMTF’s lower current capability (50mA vs. 80mA) may limit linearity in high-drive scenarios. Re-tune matching networks and verify NF and IP3 in your actual circuit before committing.
Given that the KSC3123RMTF is marked as obsolete by onsemi, what long-term supply chain and reliabil
Designing in an obsolete part like the KSC3123RMTF poses significant long-term risks: no new production, limited distributor stock (currently ~3200 pcs), and potential for counterfeit or degraded inventory. Even though MSL 1 allows unlimited floor life, long storage can still affect solderability and parametric drift. For new designs, strongly consider pin-compatible, active alternatives like the BFR740L3RHE6327XTSA1 or PH3135-5S. If you must use the KSC3123RMTF, secure a lifetime buy, implement rigorous incoming inspection, and design the PCB to allow easy substitution with a modern equivalent.
How does the KSC3123RMTF’s noise figure of 3.8–5.5 dB at 200 MHz impact its usability in a sensitive
The KSC3123RMTF’s noise figure (NF) of 3.8–5.5 dB at 200 MHz is marginal for high-sensitivity VHF receivers, where sub-2 dB NF is often desired. While optimal biasing (typically 5–10 mA Ic) and conjugate matching at the input can minimize NF toward the 3.8 dB end, you cannot overcome the device’s inherent limitations. Consider using a dedicated low-noise transistor like the BFR182WH6327XTSA1 (NF ~1.2 dB) instead. If locked into the KSC3123RMTF, use a low-noise preamp stage before it or accept reduced sensitivity—especially problematic in weak-signal environments.
What layout and decoupling practices are critical when integrating the KSC3123RMTF in a high-frequen
Stable operation of the KSC3123RMTF above 500 MHz demands strict RF layout practices: use a solid ground plane beneath the SOT-23-3 package, keep input/output traces short and impedance-controlled (50 Ω), and place DC blocking and bypass capacitors (e.g., 100 pF + 10 nF) within 2 mm of the pins. Avoid shared return paths between input and output to prevent feedback. Add a small ferrite bead or series resistor (10–47 Ω) at the collector if gain peaking occurs. Always include test points for S11/S22 monitoring—unstable KSC3123RMTF circuits often oscillate just outside the intended band due to package parasitics and poor grounding.
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Sep 15 2026
