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MMRF1305HSR5
Electronics Part Number
MMRF1305HSR5-WXManufacturer
onsemi
MMRF1305HSR5
Description
NI780 LDMOS transistor, 50V RF MOSFET.Inventory
967 Pcs New Original In Stock
RF MOSFET, NI-780S-4L, 50V, 512MHz, 26dB gain, 100W; efficient RF power delivery.
Quantity
Minimum 1
Minimum 1
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Worldwide Delivery in 3-5 Business Days
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Submit your RFQ directly on the product detail page or the RFQ page.
Our sales team will respond within 24 hours.
Payment method
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Freight
Basic cost: USD 70.00
Actual cost may vary depending on weight and destination
Shipping method
Shipped from Hong Kong via FedEx/DHL/UPS/TNT
Delivery Time
In-stock items: Ready to ship in 1-2 days
Transit time: 3-5 business days (FedEx/DHL/UPS)
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Quantity
Minimum 1
Minimum 1
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We'll get back to you within 24 hours
Technical Specifications
Category
Transistors, Bipolar (BJT), Bipolar Transistor Arrays
Manufacturer
onsemi
Packaging
Cut Tape (CT) & Digi-Reel®
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
16-SOIC (0.154", 3.90mm Width)
Series
-
Base Product Number
NCV1413
Product Status
Active
Power - Max
-
Supplier Device Package
16-SOIC
Grade
Automotive
Voltage - Collector Emitter Breakdown (Max)
50V
Current - Collector (Ic) (Max)
500mA
Transistor Type
7 NPN Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 350mA, 2V
Vce Saturation (Max) @ Ib, Ic
1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max)
-
Frequency - Transition
-
Data Sheet Document (D)
Datasheets
Download NCV1413BDR2G Product Specification (PDF)
HTML Datasheet
NCV1413BDR2G-DG
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Additional Information
Other Names
NCV1413BDR2GOS NCV1413BDR2GOS-DG NCV1413BDR2GOSCT ONSONSNCV1413BDR2G NCV1413BDR2GOSTR NCV1413BDR2GOSDKR 2156-NCV1413BDR2G-OS 2832-NCV1413BDR2GTR =NCV1413BDR2GOSCT-DG
Standard Package
2,500
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Sep 15 2026
