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MAX3766EEP
Electronics Part Number
MAX3766EEP-WXManufacturer
MACOM Technology Solutions
MAX3766EEP
Description
622Mbps Laser Driver IC, 5.5V Supply, 20-Pin QSOPInventory
635 Pcs New Original In Stock
622Mbps single-channel laser driver, 4.5-5.5V, 20-QSOP; stable laser bias; for SONET/SDH optical links.
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Basic cost: USD 70.00
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Technical Specifications
Category
Diodes, RF Diodes
Manufacturer
MACOM Technology Solutions
Packaging
Tape & Reel (TR)
Operating Temperature
-55°C ~ 125°C (TJ)
Package / Case
TO-236-3, SC-59, SOT-23-3
Series
MA4E1340
Base Product Number
MA4E1340
Product Status
Active
Supplier Device Package
SOT-23
Current - Max
200 mA
Power Dissipation (Max)
250 mW
Diode Type
Schottky - Single
Capacitance @ Vr, F
2pF @ 0V, 1MHz
Voltage - Peak Reverse (Max)
70V
Resistance @ If, F
-
Data Sheet Document (D)
Datasheets
Download MA4E1340A1-287T Product Specification (PDF)
HTML Datasheet
MA4E1340A1-287T-DG
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.10.0070
Additional Information
Other Names
1465-MA4E1340A1-287T-DG 1465-MA4E1340A1-287TTR 1465-MA4E1340A1-287TCT 1465-MA4E1340A1-287TDKR
Standard Package
3,000
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Frequently Asked Questions (FAQ)
How does the MA4E1340A1-287T perform in high-frequency RF detector circuits when compared to the Sky
The MA4E1340A1-287T exhibits lower temperature-dependent leakage current than the SMS7630, making it more stable across extreme operating temperatures from -55°C to 125°C. While both diodes offer low barrier Schottky performance for RF detection, the MA4E1340A1-287T maintains consistent sensitivity in harsh environments due to MACOM's optimized passivation process. Designers should consider this advantage in outdoor or automotive applications where thermal cycling occurs, potentially reducing calibration frequency and improving long-term reliability.
Can the MA4E1340A1-287T safely replace the Avago HSM282x series in zero-bias detector applications w
Yes, the MA4E1340A1-287T is well-suited for zero-bias RF detection at 2.4 GHz and offers comparable responsivity to the Avago HSM282x series, with the added benefit of a higher peak reverse voltage (70V vs. 50V), improving robustness against transient overvoltage events. However, ensure input matching networks are re-optimized due to slight differences in junction capacitance (2pF @ 0V) and series resistance. Use a small-signal model in simulation to verify sensitivity performance, especially in low-power IoT or WLAN signal sensing circuits.
What layout and thermal considerations are required for the MA4E1340A1-287T in a densely packed SOT-
When operating the MA4E1340A1-287T near its 250 mW power dissipation limit in compact layouts, ensure at least two vias under the ground-connected pad for thermal shunting and minimize copper run lengths to reduce thermal resistance. Avoid placing adjacent heat-generating components within 2 mm. Given the SOT-23-3 package's limited thermal mass, derate maximum current by 30% in enclosed spaces without airflow. Simulating board-level thermal performance using JEDEC JESD51 standards is advised for mission-critical designs.
Is the MA4E1340A1-287T susceptible to ESD damage during handling, and what protection measures shoul
Yes, the MA4E1340A1-287T is susceptible to ESD due to its Schottky junction characteristics, despite its robust 70V reverse rating. As a MSL-3 device, it requires strict ESD controls during automated pick-and-place operations. Implement ionizers, grounded tooling, and humidity-controlled environments. Avoid using socketed test fixtures without transient protection, and consider transient voltage suppression (TVS) clamping on exposed RF lines in field-deployable units to prevent latent junction degradation from repeated low-energy ESD events.
How does the 2pF junction capacitance of the MA4E1340A1-287T impact impedance matching in UHF envelo
The 2pF junction capacitance of the MA4E1340A1-287T significantly affects impedance matching above 300 MHz, requiring careful tuning of shunt and series components in UHF envelope detectors. At 900 MHz, this capacitance presents ~88 ohms reactance, which can detune standard 50-ohm networks. Use high-Q inductors in series LC matching or embed the diode within a capacitive voltage divider topology to resonate out the Cj effect. Simulate with parasitics included and validate with a vector network analyzer (VNA) to ensure optimal power transfer and detection linearity.
How does the MA4E1340A1-287T perform in high-frequency RF detector circuits when compared to the Sky
The MA4E1340A1-287T exhibits lower temperature-dependent leakage current than the SMS7630, making it more stable across extreme operating temperatures from -55°C to 125°C. While both diodes offer low barrier Schottky performance for RF detection, the MA4E1340A1-287T maintains consistent sensitivity in harsh environments due to MACOM's optimized passivation process. Designers should consider this advantage in outdoor or automotive applications where thermal cycling occurs, potentially reducing calibration frequency and improving long-term reliability.
Can the MA4E1340A1-287T safely replace the Avago HSM282x series in zero-bias detector applications w
Yes, the MA4E1340A1-287T is well-suited for zero-bias RF detection at 2.4 GHz and offers comparable responsivity to the Avago HSM282x series, with the added benefit of a higher peak reverse voltage (70V vs. 50V), improving robustness against transient overvoltage events. However, ensure input matching networks are re-optimized due to slight differences in junction capacitance (2pF @ 0V) and series resistance. Use a small-signal model in simulation to verify sensitivity performance, especially in low-power IoT or WLAN signal sensing circuits.
What layout and thermal considerations are required for the MA4E1340A1-287T in a densely packed SOT-
When operating the MA4E1340A1-287T near its 250 mW power dissipation limit in compact layouts, ensure at least two vias under the ground-connected pad for thermal shunting and minimize copper run lengths to reduce thermal resistance. Avoid placing adjacent heat-generating components within 2 mm. Given the SOT-23-3 package's limited thermal mass, derate maximum current by 30% in enclosed spaces without airflow. Simulating board-level thermal performance using JEDEC JESD51 standards is advised for mission-critical designs.
Is the MA4E1340A1-287T susceptible to ESD damage during handling, and what protection measures shoul
Yes, the MA4E1340A1-287T is susceptible to ESD due to its Schottky junction characteristics, despite its robust 70V reverse rating. As a MSL-3 device, it requires strict ESD controls during automated pick-and-place operations. Implement ionizers, grounded tooling, and humidity-controlled environments. Avoid using socketed test fixtures without transient protection, and consider transient voltage suppression (TVS) clamping on exposed RF lines in field-deployable units to prevent latent junction degradation from repeated low-energy ESD events.
How does the 2pF junction capacitance of the MA4E1340A1-287T impact impedance matching in UHF envelo
The 2pF junction capacitance of the MA4E1340A1-287T significantly affects impedance matching above 300 MHz, requiring careful tuning of shunt and series components in UHF envelope detectors. At 900 MHz, this capacitance presents ~88 ohms reactance, which can detune standard 50-ohm networks. Use high-Q inductors in series LC matching or embed the diode within a capacitive voltage divider topology to resonate out the Cj effect. Simulate with parasitics included and validate with a vector network analyzer (VNA) to ensure optimal power transfer and detection linearity.
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Sep 15 2026
