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PE7008-2
Electronics Part Number
PE7008-2-WXManufacturer
Littelfuse
PE7008-2
Description
Push-button step attenuator, 0-45.5dB range.Inventory
12 Pcs New Original In Stock
RF attenuator, BNC in-line module, 0-45.5dB, 0-750MHz, 50 ohms, 1W; adjustable signal level control.
Quantity
Minimum 1
Minimum 1
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Basic cost: USD 70.00
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Technical Specifications
Category
Transistors, IGBTs, Single IGBTs
Manufacturer
Littelfuse
Packaging
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Series
-
Base Product Number
IXSH30
Product Status
Obsolete
Power - Max
200 W
Input Type
Standard
Supplier Device Package
TO-247AD
Test Condition
480V, 30A, 4.7Ohm, 15V
Voltage - Collector Emitter Breakdown (Max)
600 V
Current - Collector (Ic) (Max)
50 A
IGBT Type
-
Current - Collector Pulsed (Icm)
100 A
Vce(on) (Max) @ Vge, Ic
3V @ 15V, 30A
Switching Energy
2.5mJ (off)
Gate Charge
110 nC
Td (on/off) @ 25°C
60ns/400ns
Reverse Recovery Time (trr)
50 ns
Data Sheet Document (D)
Datasheets
Download IXSH30N60AU1 Product Specification (PDF)
HTML Datasheet
IXSH30N60AU1-DG
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Additional Information
Standard Package
30
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Frequently Asked Questions (FAQ)
Can IXSH30N60AU1 be used as a direct replacement for IXXH30N60B3D1 in a high-frequency PFC circuit,
While both the IXSH30N60AU1 and IXXH30N60B3D1 are 600V, 50A IGBTs in TO-247 packages, they differ in switching characteristics and gate charge (IXSH30N60AU1: 110 nC vs IXXH30N60B3D1's lower 80 nC). Using IXSH30N60AU1 in place of IXXH30N60B3D1 in high-frequency PFC circuits (e.g., >40 kHz) may increase switching losses due to slower turn-off (400 ns off delay) and higher drive power requirements. Additionally, IXSH30N60AU1 is marked as obsolete, posing long-term supply risk. Mitigate risk by verifying thermal performance under load, adjusting gate drive strength, and securing lifetime buy quantities.
How does the high gate charge of 110 nC in IXSH30N60AU1 impact gate driver selection in a motor cont
The 110 nC gate charge of the IXSH30N60AU1 demands a robust gate driver capable of sourcing/sinking sufficient peak current (e.g., >1.1A for 100ns turn-on). In motor control inverters with fast switching cycles, under-specifying the driver (e.g., using a 0.5A driver) can lead to slow turn-on, increased cross-conduction losses, and thermal runaway. Use a driver like the IR2130 or UCC37321 with adequate current rating and ensure low-impedance gate routing to minimize ringing. Include a negative turn-off bias (e.g., -5V) to improve noise immunity and switching reliability.
Is the IXSH30N60AU1 suitable for hard-switching applications at 480V and 30A, and what thermal manag
Yes, IXSH30N60AU1 is rated for hard-switching under 480V, 30A conditions per its test condition specification. However, hard-switching increases turn-off energy (2.5 mJ), contributing to thermal stress. With a maximum power dissipation of 200W, ensure a thermal resistance path from junction to ambient ≤ 1.5°C/W. Use a heatsink with forced airflow, consider an isolation pad with low thermal impedance (e.g., 0.5°C-in²/W), and monitor junction temperature via Vce drift or external sensors. Avoid prolonged operation above 125°C TJ to prevent degradation and meet reliability targets.
What are the implications of using the obsolete IXSH30N60AU1 in a new industrial power supply design
Using the obsolete IXSH30N60AU1 introduces significant supply chain risk. While 14,288 units are currently available, future production is discontinued, making the design vulnerable to single-source dependency and escalating costs. For new designs, consider actively monitored drop-in alternatives like STGW30V60DF from STMicroelectronics, which offers comparable ratings with active status and better availability. If proceeding with IXSH30N60AU1, lock in long-term supply agreements and qualify a second-source option during design-in to ensure manufacturability over the product lifecycle.
How does the reverse recovery time (trr) of 50 ns in IXSH30N60AU1 affect its compatibility with fast
The 50 ns reverse recovery time (trr) of the IXSH30N60AU1’s body diode is moderate but can cause voltage overshoot and increased EMI when paired with very fast diodes (e.g., SiC Schottky) in bridge circuits. In high-side switching configurations, this mismatch may lead to shoot-through risks during dead-time. Always verify dead-time settings exceed the longer of trr or the external diode’s recovery time. For optimal performance, consider using IXSH30N60AU1 with matched ultra-fast soft-recovery diodes (e.g., BYC30X-600), or re-evaluate MOSFET or SiC alternatives for higher efficiency and lower trr interactions.
Can IXSH30N60AU1 be used as a direct replacement for IXXH30N60B3D1 in a high-frequency PFC circuit,
While both the IXSH30N60AU1 and IXXH30N60B3D1 are 600V, 50A IGBTs in TO-247 packages, they differ in switching characteristics and gate charge (IXSH30N60AU1: 110 nC vs IXXH30N60B3D1's lower 80 nC). Using IXSH30N60AU1 in place of IXXH30N60B3D1 in high-frequency PFC circuits (e.g., >40 kHz) may increase switching losses due to slower turn-off (400 ns off delay) and higher drive power requirements. Additionally, IXSH30N60AU1 is marked as obsolete, posing long-term supply risk. Mitigate risk by verifying thermal performance under load, adjusting gate drive strength, and securing lifetime buy quantities.
How does the high gate charge of 110 nC in IXSH30N60AU1 impact gate driver selection in a motor cont
The 110 nC gate charge of the IXSH30N60AU1 demands a robust gate driver capable of sourcing/sinking sufficient peak current (e.g., >1.1A for 100ns turn-on). In motor control inverters with fast switching cycles, under-specifying the driver (e.g., using a 0.5A driver) can lead to slow turn-on, increased cross-conduction losses, and thermal runaway. Use a driver like the IR2130 or UCC37321 with adequate current rating and ensure low-impedance gate routing to minimize ringing. Include a negative turn-off bias (e.g., -5V) to improve noise immunity and switching reliability.
Is the IXSH30N60AU1 suitable for hard-switching applications at 480V and 30A, and what thermal manag
Yes, IXSH30N60AU1 is rated for hard-switching under 480V, 30A conditions per its test condition specification. However, hard-switching increases turn-off energy (2.5 mJ), contributing to thermal stress. With a maximum power dissipation of 200W, ensure a thermal resistance path from junction to ambient ≤ 1.5°C/W. Use a heatsink with forced airflow, consider an isolation pad with low thermal impedance (e.g., 0.5°C-in²/W), and monitor junction temperature via Vce drift or external sensors. Avoid prolonged operation above 125°C TJ to prevent degradation and meet reliability targets.
What are the implications of using the obsolete IXSH30N60AU1 in a new industrial power supply design
Using the obsolete IXSH30N60AU1 introduces significant supply chain risk. While 14,288 units are currently available, future production is discontinued, making the design vulnerable to single-source dependency and escalating costs. For new designs, consider actively monitored drop-in alternatives like STGW30V60DF from STMicroelectronics, which offers comparable ratings with active status and better availability. If proceeding with IXSH30N60AU1, lock in long-term supply agreements and qualify a second-source option during design-in to ensure manufacturability over the product lifecycle.
How does the reverse recovery time (trr) of 50 ns in IXSH30N60AU1 affect its compatibility with fast
The 50 ns reverse recovery time (trr) of the IXSH30N60AU1’s body diode is moderate but can cause voltage overshoot and increased EMI when paired with very fast diodes (e.g., SiC Schottky) in bridge circuits. In high-side switching configurations, this mismatch may lead to shoot-through risks during dead-time. Always verify dead-time settings exceed the longer of trr or the external diode’s recovery time. For optimal performance, consider using IXSH30N60AU1 with matched ultra-fast soft-recovery diodes (e.g., BYC30X-600), or re-evaluate MOSFET or SiC alternatives for higher efficiency and lower trr interactions.
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Sep 15 2026
