Part No.
Price
(USD)
Manufacturer
(4)
- Microchip Technology
- NXP Semiconductors
- Nexperia
- onsemi
Packaging
(4)
- -
- Bulk
- Tape & Reel (TR)
- Tube
Operating Temperature
(2)
- -55°C ~ 150°C (TJ)
- -65°C ~ 200°C (TJ)
Mounting Type
(4)
- Chassis Mount
- Surface Mount
- Surface Mount, Wettable Flank
- Through Hole
Package / Case
(7)
- 3-SMD, No Lead
- 3-XDFN Exposed Pad
- NI-1230-4S
- SC-101, SOT-883
- SC-70, SOT-323
- TO-220-3
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Series
(3)
- -
- SuperFET® III
- SuperFET® V
Part Status
(1)
- Obsolete
Base Product Number
(4)
- 2N6027
- MMRF1
- PDTA114
- PDTA115
RoHS Status
(2)
- ROHS3 Compliant
- RoHS non-compliant
Moisture Sensitivity Level (MSL)
(2)
- 1 (Unlimited)
- Not Applicable
REACH Status
(1)
- REACH Unaffected
ECCN
(2)
- EAR99
- OBSOLETE
HTSUS
(6)
- 0000.00.0000
- 8541.21.0075
- 8541.21.0095
- 8541.29.0075
- 8541.29.0095
- 8541.30.0080
Standard Package
(8)
- 1
- 100
- 11,225
- 2,000
- 3,000
- 5,000
- 50
- 800
Product Status
(3)
- Active
- Not For New Designs
- Obsolete
Current Rating (Amps)
(1)
- -
Voltage - Rated
(1)
- 133 V
Gain
(1)
- 25dB
Voltage - Output
(1)
- 11V
Frequency
(1)
- 230MHz
Technology
(2)
- LDMOS
- MOSFET (Metal Oxide)
Power - Max
(4)
- 200 mW
- 250 mW
- 300 mW
- 340 mW
Configuration
(1)
- Dual
Supplier Device Package
(6)
- DFN1006B-3
- DFN1110D-3
- NI-1230-4S
- SOT-323
- TO-220-3
- UB
Voltage
(1)
- 40V
Grade
(2)
- Automotive
- Military
Qualification
(3)
- AEC-Q100
- AEC-Q101
- MIL-PRF-19500/295
Current - Test
(1)
- 100 mA
Power Dissipation (Max)
(3)
- 116W (Tc)
- 142W (Tc)
- 300 mW
Voltage - Collector Emitter Breakdown (Max)
(1)
- 50 V
Current - Collector (Ic) (Max)
(2)
- 100 mA
- 20 mA
Power - Output
(1)
- 600W
Noise Figure
(1)
- -
Voltage - Offset (Vt)
(1)
- 1.6 V
Current - Gate to Anode Leakage (Igao)
(1)
- 10 nA
Current - Valley (Iv)
(1)
- 50 µA
Current - Peak
(1)
- 2 µA
FET Type
(2)
- N-Channel
- P-Channel
Voltage - Breakdown (V(BR)GSS)
(1)
- 30 V
Drain to Source Voltage (Vdss)
(2)
- 600 V
- 650 V
Current - Drain (Idss) @ Vds (Vgs=0)
(1)
- 1 mA @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
(3)
- 10pF @ 5V
- 1350 pF @ 400 V
- 1808 pF @ 400 V
Voltage - Cutoff (VGS off) @ Id
(1)
- 750 mV @ 1 µA
Transistor Type
(1)
- PNP - Pre-Biased
Resistor - Base (R1)
(2)
- 10 kOhms
- 100 kOhms
Resistor - Emitter Base (R2)
(2)
- 100 kOhms
- 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
(2)
- 100 @ 5mA, 5V
- 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic
(2)
- 100mV @ 250µA, 5mA
- 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
(2)
- 100nA
- 1µA
Frequency - Transition
(1)
- 180 MHz
Voltage - Test
(1)
- 50 V
Current - Continuous Drain (Id) @ 25°C
(2)
- 15A (Tc)
- 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
(1)
- 10V
Rds On (Max) @ Id, Vgs
(2)
- 165mOhm @ 9.5A, 10V
- 185mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id
(2)
- 4.3V @ 1.4mA
- 4V @ 1.6mA
Gate Charge (Qg) (Max) @ Vgs
(2)
- 25 nC @ 10 V
- 35 nC @ 10 V
Vgs (Max)
(1)
- ±30V
FET Feature
(1)
- -
10
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Inventory | Datasheet | RoHS | Manufacturer | Packaging | Operating Temperature | Mounting Type | Package / Case | Series | Part Status | Base Product Number | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | ECCN | HTSUS | Standard Package | Product Status | Current Rating (Amps) | Voltage - Rated | Gain | Voltage - Output | Frequency | Technology | Power - Max | Configuration | Supplier Device Package | Voltage | Grade | Qualification | Current - Test | Power Dissipation (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Power - Output | Noise Figure | Voltage - Offset (Vt) | Current - Gate to Anode Leakage (Igao) | Current - Valley (Iv) | Current - Peak | FET Type | Voltage - Breakdown (V(BR)GSS) | Drain to Source Voltage (Vdss) | Current - Drain (Idss) @ Vds (Vgs=0) | Input Capacitance (Ciss) (Max) @ Vds | Voltage - Cutoff (VGS off) @ Id | Transistor Type | Resistor - Base (R1) | Resistor - Emitter Base (R2) | DC Current Gain (hFE) (Min) @ Ic, Vce | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | Frequency - Transition | Voltage - Test | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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