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EFR32ZG23A020F512GM48-BR
Electronics Part Number
EFR32ZG23A020F512GM48-BR-WXManufacturer
Analog Devices, Inc.
EFR32ZG23A020F512GM48-BR
Description
Sub-GHz Microcontroller ZG23 Featuring 512 KB Flash, 64 KB RAM, and Low-Power OperationInventory
840 Pcs New Original In Stock
RF transceiver with integrated MCU for Z-Wave, 863-870/902-928MHz, 48-VFQFN.
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Minimum 1
Minimum 1
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Basic cost: USD 70.00
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Technical Specifications
Category
RF Mixers
Manufacturer
Analog Devices, Inc.
Packaging
Tape & Reel (TR)
Mounting Type
Surface Mount
Package / Case
16-WQFN Exposed Pad
Series
LT5527
Base Product Number
LT5527
Product Status
Active
Gain
2.3dB
Current - Supply
78mA
Frequency
400MHz ~ 3.7GHz
Voltage - Supply
4.5V ~ 5.25V
Supplier Device Package
16-QFN (4x4)
RF Type
Cellular, GSM, MMDS, TD-SCDMA, UMTS, WCDMA
Secondary Attributes
Down Converter
Number of Mixers
1
Noise Figure
12.5dB
Data Sheet Document (D)
Datasheets
Download LT5527EUF#TRPBF Product Specification (PDF)
HTML Datasheet
LT5527EUF#TRPBF-DG
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8542.39.0001
Additional Information
Other Names
505-LT5527EUF#TRPBFTR LT5527EUF#TRPBF-DG 505-LT5527EUF#TRPBFDKR 505-LT5527EUF#TRPBFCT
Standard Package
2,500
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Frequently Asked Questions (FAQ)
When designing a high-density RF front-end for a multi-band cellular base station, how does the LT55
The LT5527EUF#TRPBF offers higher integration with an on-chip LO buffer and optimized impedance matching, reducing external component count compared to the discrete RMS-25+ solution. However, its 16-QFN package with an exposed pad requires careful thermal design—ensure a solid ground plane under the pad with multiple vias to dissipate heat, especially when operating near the upper supply voltage (5.25V) and high ambient temperatures. Unlike the RMS-25+, which is a passive mixer with lower power dissipation, the LT5527EUF#TRPBF’s active design demands strict attention to PCB stack-up and grounding to maintain noise figure and linearity performance in dense layouts.
Can I use the LT5527EUF#TRPBF as a drop-in replacement for the Analog Devices ADRF6601 in a WCDMA re
While both are down-converting mixers, the LT5527EUF#TRPBF is not a direct drop-in replacement for the ADRF6601 due to differences in architecture—the ADRF6601 integrates a fractional-N PLL and VCO, whereas the LT5527EUF#TRPBF requires an external LO source. You must re-evaluate LO drive level compatibility (LT5527EUF#TRPBF needs +3 to +6 dBm), input IP3 performance under your specific LO power, and DC biasing. Additionally, the LT5527EUF#TRPBF’s lower gain (2.3 dB vs. ~7 dB for ADRF6601) may necessitate adjustments in your LNA stage to maintain system noise figure, particularly in low-signal environments.
In a TD-SCDMA repeater application with tight space constraints, what are the risks of operating the
Operating the LT5527EUF#TRPBF at 4.5V reduces headroom for internal bias circuits, which can degrade OIP3 by 2–3 dB compared to operation at 5.0V, increasing the risk of intermodulation distortion in high-dynamic-range TD-SCDMA signals. While the device remains functional, long-term reliability may be impacted in elevated ambient temperatures (>85°C) due to increased junction temperature from reduced efficiency. To mitigate risk, implement active thermal monitoring and ensure adequate airflow or heatsinking, especially if the system lacks temperature compensation in the gain control loop.
How should I handle ESD protection and RF grounding when integrating the LT5527EUF#TRPBF into a comp
The LT5527EUF#TRPBF’s 16-QFN exposed pad must be soldered directly to a low-impedance ground plane with at least six thermal vias to ensure both thermal stability and RF return path integrity. For ESD protection, place TVS diodes (e.g., CDSOD323-T05C) on all RF input/output lines within 2 mm of the connector, but avoid adding capacitance that could detune the matching network. Since the device is sensitive to substrate noise, isolate digital and analog grounds using a star ground point near the LT5527EUF#TRPBF’s ground pin. This prevents latch-up and minimizes gain drift due to ground bounce in high-interference environments typical of MMDS deployments.
What are the key trade-offs when selecting the LT5527EUF#TRPBF over the Qorvo QMx2150 for a low-powe
The LT5527EUF#TRPBF consumes 78 mA from a 5V supply (~390 mW), significantly higher than the QMx2150’s ~180 mW, making it less ideal for battery-powered GSM/GPRS devices. However, the LT5527EUF#TRPBF provides better port-to-port isolation and superior LO leakage performance, which reduces the need for external filtering—potentially lowering total BOM cost despite higher unit pricing. Additionally, the LT5527EUF#TRPBF’s integrated LO buffer simplifies LO distribution in multi-channel systems. For volume production, evaluate total system power budget: if filtering and LO buffering dominate cost, the LT5527EUF#TRPBF may offer better overall value despite higher quiescent current.
When designing a high-density RF front-end for a multi-band cellular base station, how does the LT55
The LT5527EUF#TRPBF offers higher integration with an on-chip LO buffer and optimized impedance matching, reducing external component count compared to the discrete RMS-25+ solution. However, its 16-QFN package with an exposed pad requires careful thermal design—ensure a solid ground plane under the pad with multiple vias to dissipate heat, especially when operating near the upper supply voltage (5.25V) and high ambient temperatures. Unlike the RMS-25+, which is a passive mixer with lower power dissipation, the LT5527EUF#TRPBF’s active design demands strict attention to PCB stack-up and grounding to maintain noise figure and linearity performance in dense layouts.
Can I use the LT5527EUF#TRPBF as a drop-in replacement for the Analog Devices ADRF6601 in a WCDMA re
While both are down-converting mixers, the LT5527EUF#TRPBF is not a direct drop-in replacement for the ADRF6601 due to differences in architecture—the ADRF6601 integrates a fractional-N PLL and VCO, whereas the LT5527EUF#TRPBF requires an external LO source. You must re-evaluate LO drive level compatibility (LT5527EUF#TRPBF needs +3 to +6 dBm), input IP3 performance under your specific LO power, and DC biasing. Additionally, the LT5527EUF#TRPBF’s lower gain (2.3 dB vs. ~7 dB for ADRF6601) may necessitate adjustments in your LNA stage to maintain system noise figure, particularly in low-signal environments.
In a TD-SCDMA repeater application with tight space constraints, what are the risks of operating the
Operating the LT5527EUF#TRPBF at 4.5V reduces headroom for internal bias circuits, which can degrade OIP3 by 2–3 dB compared to operation at 5.0V, increasing the risk of intermodulation distortion in high-dynamic-range TD-SCDMA signals. While the device remains functional, long-term reliability may be impacted in elevated ambient temperatures (>85°C) due to increased junction temperature from reduced efficiency. To mitigate risk, implement active thermal monitoring and ensure adequate airflow or heatsinking, especially if the system lacks temperature compensation in the gain control loop.
How should I handle ESD protection and RF grounding when integrating the LT5527EUF#TRPBF into a comp
The LT5527EUF#TRPBF’s 16-QFN exposed pad must be soldered directly to a low-impedance ground plane with at least six thermal vias to ensure both thermal stability and RF return path integrity. For ESD protection, place TVS diodes (e.g., CDSOD323-T05C) on all RF input/output lines within 2 mm of the connector, but avoid adding capacitance that could detune the matching network. Since the device is sensitive to substrate noise, isolate digital and analog grounds using a star ground point near the LT5527EUF#TRPBF’s ground pin. This prevents latch-up and minimizes gain drift due to ground bounce in high-interference environments typical of MMDS deployments.
What are the key trade-offs when selecting the LT5527EUF#TRPBF over the Qorvo QMx2150 for a low-powe
The LT5527EUF#TRPBF consumes 78 mA from a 5V supply (~390 mW), significantly higher than the QMx2150’s ~180 mW, making it less ideal for battery-powered GSM/GPRS devices. However, the LT5527EUF#TRPBF provides better port-to-port isolation and superior LO leakage performance, which reduces the need for external filtering—potentially lowering total BOM cost despite higher unit pricing. Additionally, the LT5527EUF#TRPBF’s integrated LO buffer simplifies LO distribution in multi-channel systems. For volume production, evaluate total system power budget: if filtering and LO buffering dominate cost, the LT5527EUF#TRPBF may offer better overall value despite higher quiescent current.
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Sep 15 2026
