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DPX161576DT-8011B1
Electronics Part Number
DPX161576DT-8011B1-WXManufacturer
onsemi
DPX161576DT-8011B1
Description
0603 diplexer supporting 873.5MHz / 1575.42MHz.Inventory
368 Pcs New Original In Stock
RF diplexer, 0603 6-lead; splits 806-941MHz and 1574.42-1576.42MHz for GNSS/LTE coexistence.
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Basic cost: USD 70.00
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Technical Specifications
Category
Transistors, JFETs
Manufacturer
onsemi
Packaging
Cut Tape (CT) & Digi-Reel®
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Series
-
Base Product Number
MMBFU310
Product Status
Active
Power - Max
225 mW
Supplier Device Package
SOT-23-3 (TO-236)
FET Type
N-Channel
Voltage - Breakdown (V(BR)GSS)
25 V
Drain to Source Voltage (Vdss)
25 V
Current - Drain (Idss) @ Vds (Vgs=0)
24 mA @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
5pF @ 10V (VGS)
Voltage - Cutoff (VGS off) @ Id
2.5 V @ 1 nA
Data Sheet Document (D)
Datasheets
Download MMBFU310LT1G Product Specification (PDF)
HTML Datasheet
MMBFU310LT1G-DG
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Additional Information
Other Names
MMBFU310LT1GOSDKR ONSONSMMBFU310LT1G MMBFU310LT1GOS MMBFU310LT1GOS-DG MMBFU310LT1GOSCT MMBFU310LT1GOSTR 2156-MMBFU310LT1G-OS
Standard Package
3,000
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Frequently Asked Questions (FAQ)
When integrating the MMBFU310LT1G JFET into a high-frequency application, what are the primary conce
The MMBFU310LT1G's input capacitance (Ciss) of 5pF at 10V can pose a significant parasitic load in high-frequency circuits, potentially limiting bandwidth and causing signal distortion. To mitigate this, consider techniques such as source degeneration with a small resistor to reduce effective input capacitance, careful PCB layout to minimize stray capacitance, and pairing the MMBFU310LT1G with active biasing circuits that reduce the voltage swing across the Ciss. For applications exceeding the ideal frequency response, alternative low-capacitance JFETs might need to be evaluated.
Under what conditions might the 25V breakdown voltage (V(BR)GSS and Vdss) of the MMBFU310LT1G become
The 25V breakdown voltage of the MMBFU310LT1G is a critical limit that can be exceeded due to voltage transients, inductive kickback, or improper circuit design. To prevent failure, implement robust overvoltage protection circuitry such as Zener diodes or transient voltage suppressors (TVS diodes) on the gate and drain lines. Additionally, carefully analyze the expected maximum voltage swings in your circuit, especially during switching events or fault conditions, and ensure a sufficient safety margin is maintained. Always derate the operating voltage well below the datasheet maximum.
What are the key trade-offs and potential integration challenges when substituting the MMBFU310LT1G
While the MMBF5457 is a listed substitute for the MMBFU310LT1G, careful consideration of its performance characteristics is crucial. The MMBF5457 may exhibit different Idss, VGS(off), and capacitance values, which can impact transconductance, biasing stability, and bandwidth. For instance, if the MMBF5457 has a significantly different VGS(off), it could necessitate a complete re-evaluation of your biasing network to maintain the desired operating point. Always perform thorough bench testing to verify that the MMBF5457 meets your specific application's performance and reliability requirements before committing to a design change.
For applications requiring very low leakage current, how does the MMBFU310LT1G's specified Idss of 2
The MMBFU310LT1G's Idss of 24mA at 10V (Vgs=0) is a static drain current characteristic under specific conditions. For precision measurement circuits demanding extremely low leakage, this value might be higher than ideal when the JFET is intended to be in a non-conductive state. To minimize leakage, use high-quality, low-leakage PCB materials, implement guard rings around the JFET terminals to collect stray leakage currents, and ensure proper cleaning of the PCB after assembly to remove flux residues that can become conductive. Operating the MMBFU310LT1G with a sufficiently negative Vgs will also significantly reduce drain current.
Considering the MMBFU310LT1G's maximum power dissipation of 225mW and its operating temperature rang
Ensuring the long-term reliability of the MMBFU310LT1G requires careful thermal management. The 225mW power dissipation limit means that even moderate continuous operation can lead to significant self-heating. In thermally challenging environments, implement adequate heatsinking strategies such as thermal vias to copper planes on the PCB, or a small heatsink if space permits. Employ a generous safety margin for power dissipation, especially at higher ambient temperatures. Furthermore, conduct accelerated life testing under worst-case temperature and power conditions to validate the MMBFU310LT1G's endurance in your specific application.
When integrating the MMBFU310LT1G JFET into a high-frequency application, what are the primary conce
The MMBFU310LT1G's input capacitance (Ciss) of 5pF at 10V can pose a significant parasitic load in high-frequency circuits, potentially limiting bandwidth and causing signal distortion. To mitigate this, consider techniques such as source degeneration with a small resistor to reduce effective input capacitance, careful PCB layout to minimize stray capacitance, and pairing the MMBFU310LT1G with active biasing circuits that reduce the voltage swing across the Ciss. For applications exceeding the ideal frequency response, alternative low-capacitance JFETs might need to be evaluated.
Under what conditions might the 25V breakdown voltage (V(BR)GSS and Vdss) of the MMBFU310LT1G become
The 25V breakdown voltage of the MMBFU310LT1G is a critical limit that can be exceeded due to voltage transients, inductive kickback, or improper circuit design. To prevent failure, implement robust overvoltage protection circuitry such as Zener diodes or transient voltage suppressors (TVS diodes) on the gate and drain lines. Additionally, carefully analyze the expected maximum voltage swings in your circuit, especially during switching events or fault conditions, and ensure a sufficient safety margin is maintained. Always derate the operating voltage well below the datasheet maximum.
What are the key trade-offs and potential integration challenges when substituting the MMBFU310LT1G
While the MMBF5457 is a listed substitute for the MMBFU310LT1G, careful consideration of its performance characteristics is crucial. The MMBF5457 may exhibit different Idss, VGS(off), and capacitance values, which can impact transconductance, biasing stability, and bandwidth. For instance, if the MMBF5457 has a significantly different VGS(off), it could necessitate a complete re-evaluation of your biasing network to maintain the desired operating point. Always perform thorough bench testing to verify that the MMBF5457 meets your specific application's performance and reliability requirements before committing to a design change.
For applications requiring very low leakage current, how does the MMBFU310LT1G's specified Idss of 2
The MMBFU310LT1G's Idss of 24mA at 10V (Vgs=0) is a static drain current characteristic under specific conditions. For precision measurement circuits demanding extremely low leakage, this value might be higher than ideal when the JFET is intended to be in a non-conductive state. To minimize leakage, use high-quality, low-leakage PCB materials, implement guard rings around the JFET terminals to collect stray leakage currents, and ensure proper cleaning of the PCB after assembly to remove flux residues that can become conductive. Operating the MMBFU310LT1G with a sufficiently negative Vgs will also significantly reduce drain current.
Considering the MMBFU310LT1G's maximum power dissipation of 225mW and its operating temperature rang
Ensuring the long-term reliability of the MMBFU310LT1G requires careful thermal management. The 225mW power dissipation limit means that even moderate continuous operation can lead to significant self-heating. In thermally challenging environments, implement adequate heatsinking strategies such as thermal vias to copper planes on the PCB, or a small heatsink if space permits. Employ a generous safety margin for power dissipation, especially at higher ambient temperatures. Furthermore, conduct accelerated life testing under worst-case temperature and power conditions to validate the MMBFU310LT1G's endurance in your specific application.
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Sep 15 2026
